Scanning the Transistor Issue

The Solid-State Devices Committee of the IRE and AIEE which organized this special issue felt it proper to honor the co-inventors of the transistor. To this end we have asked each gentleman to write a short essay, and these are given first place in the body of this issue. We delight in paying tribut...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Proceedings of the IRE 1958-06, Vol.46 (6), p.949-951
1. Verfasser:	Angello, Stephen J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carrier density Charge carriers Electrons Germanium P-n junctions Solid state circuits Transistors
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