Experimental Drain I-V Characteristics of Power MOS Transistors and the Nature of Reverse Leakage Current of Oxide Passivated PN Junctions

Drain electrical characteristics for a 10 A and 400V MOS transistor have been measured and analyzed. At junction temperature as high as 200 degC and above this value, accentuated rise of the drain reverse (blocking) current takes place before the specified voltage of 400 V is reached, due to current...

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Bibliographische Detailangaben

Hauptverfasser:	Obreja, V.V.N., Podaru, C., Manea, E., Coraci, A., Codreanu, C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Current measurement Electric variables Electric variables measurement Leakage current MOSFETs Power measurement Research and development Silicon Temperature Threshold voltage
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