Ka-Band (35 GHz) Low-noise 180 nm SOI CMOS Amplifier
We present the development of a coplanar waveguide (CPW) Ka-band (35 GHz) low-noise amplifier (LNA) designed in MIT-Lincoln Laboratory (MIT-LL) 180 nm fully depleted silicon-on-insulator (FDSOI) CMOS technology fabricated on a "float zone" (2000 ohm-cm) substrate. The LNA exhibits a noise...
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| creator | Riemer, P.J. Prairie, J.F. Buhrow, B.R. Chen, C.L. Keast, C.L. Wyatt, P.W. Randall, B.A. Gilbert, B.K. Daniel, E.S. |
| description | We present the development of a coplanar waveguide (CPW) Ka-band (35 GHz) low-noise amplifier (LNA) designed in MIT-Lincoln Laboratory (MIT-LL) 180 nm fully depleted silicon-on-insulator (FDSOI) CMOS technology fabricated on a "float zone" (2000 ohm-cm) substrate. The LNA exhibits a noise figure of 6.5 dB and an associated gain of 6.7 dB at 37 GHz while consuming 27.5 mW of DC power. When biased for maximum gain the LNA exhibits 7.3 dB gain at 35.8 GHz |
| doi_str_mv | 10.1109/SOI.2006.284467 |
| format | Conference Proceeding |
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The LNA exhibits a noise figure of 6.5 dB and an associated gain of 6.7 dB at 37 GHz while consuming 27.5 mW of DC power. When biased for maximum gain the LNA exhibits 7.3 dB gain at 35.8 GHz</abstract><pub>IEEE</pub><doi>10.1109/SOI.2006.284467</doi><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 1078-621X |
| ispartof | 2006 IEEE international SOI Conferencee Proceedings, 2006, p.125-126 |
| issn | 1078-621X 2577-2295 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS technology Coplanar waveguides Fabrication Gain Laboratories Low-noise amplifiers MMICs Noise figure Power transmission lines |
| title | Ka-Band (35 GHz) Low-noise 180 nm SOI CMOS Amplifier |
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