A Nanoscale bSPIFET to Overcome CMOS Scaling

A Nanoscale bSPIFET to Overcome CMOS Scaling

In this paper, we are working on a probe into the effects of gate length (L g ) variation upon the nanoscale silicon on partial insulator field-effect transistor with block oxide (bSPIFET) being use for deca-nanometer age

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Bibliographische Detailangaben
Hauptverfasser: Jyi-Tsong Lin, Yi-Chuen Eng, Tai-Yi Lee, Kao-Cheng Lin
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Doping
Etching
FETs
Immune system
Insulation
Nanoscale devices
Probes
Silicon on insulator technology
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Beschreibung
Zusammenfassung:In this paper, we are working on a probe into the effects of gate length (L g ) variation upon the nanoscale silicon on partial insulator field-effect transistor with block oxide (bSPIFET) being use for deca-nanometer age
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2006.284445