Vacancy At Si-SiO2 Interface: Ab-Initio Study
Using density functional theory calculations within the generalized gradient approximation we have examined structure and dynamics of neutral Si vacancies at Si/SiO 2 interface. We show that Si/SiO 2 interface may serve as a limited sink for Si vacancies. Single vacancy and vacancy cluster defects a...
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| creator | Kirichenko, T.A. Yu, D. Hwang, G.S. Banerjee, S.K. |
| description | Using density functional theory calculations within the generalized gradient approximation we have examined structure and dynamics of neutral Si vacancies at Si/SiO 2 interface. We show that Si/SiO 2 interface may serve as a limited sink for Si vacancies. Single vacancy and vacancy cluster defects are substantially more stable at c-Si/a-SiO 2 interface compared to the bulk c-Si layers away from interface, mainly due to termination of dangling bonds with bridging O atoms and reduction of interface strain |
| doi_str_mv | 10.1109/SISPAD.2006.282859 |
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We show that Si/SiO 2 interface may serve as a limited sink for Si vacancies. 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We show that Si/SiO 2 interface may serve as a limited sink for Si vacancies. Single vacancy and vacancy cluster defects are substantially more stable at c-Si/a-SiO 2 interface compared to the bulk c-Si layers away from interface, mainly due to termination of dangling bonds with bridging O atoms and reduction of interface strain</abstract><pub>IEEE</pub><doi>10.1109/SISPAD.2006.282859</doi><tpages>3</tpages></addata></record> |
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| subjects | Amorphous materials Atomic layer deposition Capacitive sensors Chemical engineering Chemical technology Density functional theory diffusion vacancy interface Network topology point defects Silicon SiO2 Surface treatment Temperature |
| title | Vacancy At Si-SiO2 Interface: Ab-Initio Study |
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