A study of Class C operation of GaAs power HBTs
GaAs power HBTs are traditionally biased in Class A or Class AB mode for power amplifiers. This paper describes the tradeoffs of operating these devices in Class C bias. We find that power-added efficiency (PAE) improves and power gain decreases in Class C when compared to Class AB bias. At 6 GHz, t...
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| creator | Ali, F. Gupta, A. Salib, M. Veasel, B. |
| description | GaAs power HBTs are traditionally biased in Class A or Class AB mode for power amplifiers. This paper describes the tradeoffs of operating these devices in Class C bias. We find that power-added efficiency (PAE) improves and power gain decreases in Class C when compared to Class AB bias. At 6 GHz, the PAE increased by greater than 10 percentage points (from 68.9% in Class AB to 80.6% in Class C) with concurrent loss of 4.3 dB in power gain. The efficiency improves monotonically with lower operating frequency. In a single-tone environment, the second harmonic increases by /spl sim/7 dB in Class C over Class AB. To our knowledge, this is the first report on the experimental study of Class C operation of GaAs HBTs.< > |
| doi_str_mv | 10.1109/MWSYM.1995.406006 |
| format | Conference Proceeding |
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This paper describes the tradeoffs of operating these devices in Class C bias. We find that power-added efficiency (PAE) improves and power gain decreases in Class C when compared to Class AB bias. At 6 GHz, the PAE increased by greater than 10 percentage points (from 68.9% in Class AB to 80.6% in Class C) with concurrent loss of 4.3 dB in power gain. The efficiency improves monotonically with lower operating frequency. In a single-tone environment, the second harmonic increases by /spl sim/7 dB in Class C over Class AB. To our knowledge, this is the first report on the experimental study of Class C operation of GaAs HBTs.< ></description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780780325814</identifier><identifier>ISBN: 0780325818</identifier><identifier>EISSN: 2576-7216</identifier><identifier>DOI: 10.1109/MWSYM.1995.406006</identifier><language>eng</language><publisher>IEEE</publisher><subject>Breakdown voltage ; Fingers ; Gallium arsenide ; Heterojunction bipolar transistors ; MESFETs ; Power amplifiers ; Power supplies ; Radio frequency ; Radiofrequency amplifiers ; Tuners</subject><ispartof>Proceedings of 1995 IEEE MTT-S International Microwave Symposium, 1995, p.721-724 vol.2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/406006$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/406006$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ali, F.</creatorcontrib><creatorcontrib>Gupta, A.</creatorcontrib><creatorcontrib>Salib, M.</creatorcontrib><creatorcontrib>Veasel, B.</creatorcontrib><title>A study of Class C operation of GaAs power HBTs</title><title>Proceedings of 1995 IEEE MTT-S International Microwave Symposium</title><addtitle>MWSYM</addtitle><description>GaAs power HBTs are traditionally biased in Class A or Class AB mode for power amplifiers. This paper describes the tradeoffs of operating these devices in Class C bias. We find that power-added efficiency (PAE) improves and power gain decreases in Class C when compared to Class AB bias. At 6 GHz, the PAE increased by greater than 10 percentage points (from 68.9% in Class AB to 80.6% in Class C) with concurrent loss of 4.3 dB in power gain. The efficiency improves monotonically with lower operating frequency. In a single-tone environment, the second harmonic increases by /spl sim/7 dB in Class C over Class AB. To our knowledge, this is the first report on the experimental study of Class C operation of GaAs HBTs.< ></description><subject>Breakdown voltage</subject><subject>Fingers</subject><subject>Gallium arsenide</subject><subject>Heterojunction bipolar transistors</subject><subject>MESFETs</subject><subject>Power amplifiers</subject><subject>Power supplies</subject><subject>Radio frequency</subject><subject>Radiofrequency amplifiers</subject><subject>Tuners</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>9780780325814</isbn><isbn>0780325818</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1995</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj9tKw0AYhBcPYKh5AL3aF9j038O_h8sYtBVavLCiXpVNdgORakI2In17I3UYGPgGBoaQGw4F5-CW29fn923BncNCgQbQZyQTaDQzgutzkjtjYbYUaLm6IBlw5ZhW-HZF8pQ-YJZClGgzsixpmr7DkfYtrQ4-JVrRfoijn7r-6w-ufJno0P_Eka7vdumaXLb-kGL-nwvy8nC_q9Zs87R6rMoN67gRE2sbGXiwPtQea228sbENXoFzSrhGQo3CykaAcahqnGtsoQ5BoNJGR6vkgtyedrsY434Yu08_Hvent_IXFQxEOQ</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>Ali, F.</creator><creator>Gupta, A.</creator><creator>Salib, M.</creator><creator>Veasel, B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1995</creationdate><title>A study of Class C operation of GaAs power HBTs</title><author>Ali, F. ; Gupta, A. ; Salib, M. ; Veasel, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-fc3d1d8adba5b67a78efda4099429c30b5283c207954b5a785f0bdd254676e843</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Breakdown voltage</topic><topic>Fingers</topic><topic>Gallium arsenide</topic><topic>Heterojunction bipolar transistors</topic><topic>MESFETs</topic><topic>Power amplifiers</topic><topic>Power supplies</topic><topic>Radio frequency</topic><topic>Radiofrequency amplifiers</topic><topic>Tuners</topic><toplevel>online_resources</toplevel><creatorcontrib>Ali, F.</creatorcontrib><creatorcontrib>Gupta, A.</creatorcontrib><creatorcontrib>Salib, M.</creatorcontrib><creatorcontrib>Veasel, B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ali, F.</au><au>Gupta, A.</au><au>Salib, M.</au><au>Veasel, B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A study of Class C operation of GaAs power HBTs</atitle><btitle>Proceedings of 1995 IEEE MTT-S International Microwave Symposium</btitle><stitle>MWSYM</stitle><date>1995</date><risdate>1995</risdate><spage>721</spage><epage>724 vol.2</epage><pages>721-724 vol.2</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>9780780325814</isbn><isbn>0780325818</isbn><abstract>GaAs power HBTs are traditionally biased in Class A or Class AB mode for power amplifiers. This paper describes the tradeoffs of operating these devices in Class C bias. We find that power-added efficiency (PAE) improves and power gain decreases in Class C when compared to Class AB bias. At 6 GHz, the PAE increased by greater than 10 percentage points (from 68.9% in Class AB to 80.6% in Class C) with concurrent loss of 4.3 dB in power gain. The efficiency improves monotonically with lower operating frequency. In a single-tone environment, the second harmonic increases by /spl sim/7 dB in Class C over Class AB. To our knowledge, this is the first report on the experimental study of Class C operation of GaAs HBTs.< ></abstract><pub>IEEE</pub><doi>10.1109/MWSYM.1995.406006</doi></addata></record> |
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| ispartof | Proceedings of 1995 IEEE MTT-S International Microwave Symposium, 1995, p.721-724 vol.2 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_406006 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Breakdown voltage Fingers Gallium arsenide Heterojunction bipolar transistors MESFETs Power amplifiers Power supplies Radio frequency Radiofrequency amplifiers Tuners |
| title | A study of Class C operation of GaAs power HBTs |
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