Development of Localized Plasma Confinement (LPC) CVD method for high rate and uniform deposition of thin-film crystalline Si
A Localized Plasma Confinement (LPC) CVD method was newly developed. The special cathode, which has periodically arranged pyramid-nozzles and pumping holes, enables stable plasma generation under very high-pressure (1,000-2,000Pa) conditions. We could fabricate uniform and high quality muc-Si films...
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| creator | Matsumoto, M. Kawamoto, K. Mishima, T. Haku, H. Shima, M. Terakawa, A. Tanaka, M. |
| description | A Localized Plasma Confinement (LPC) CVD method was newly developed. The special cathode, which has periodically arranged pyramid-nozzles and pumping holes, enables stable plasma generation under very high-pressure (1,000-2,000Pa) conditions. We could fabricate uniform and high quality muc-Si films with very high deposition rates and very high gas utilization efficiencies by using LPC-CVD. The maximum deposition rates of 4.1 nm/s for muc-Si and 5.7 nm/s for a-Si have been also achieved. This method is expected to be effective for larger-area deposition |
| doi_str_mv | 10.1109/WCPEC.2006.279787 |
| format | Conference Proceeding |
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The special cathode, which has periodically arranged pyramid-nozzles and pumping holes, enables stable plasma generation under very high-pressure (1,000-2,000Pa) conditions. We could fabricate uniform and high quality muc-Si films with very high deposition rates and very high gas utilization efficiencies by using LPC-CVD. The maximum deposition rates of 4.1 nm/s for muc-Si and 5.7 nm/s for a-Si have been also achieved. 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The special cathode, which has periodically arranged pyramid-nozzles and pumping holes, enables stable plasma generation under very high-pressure (1,000-2,000Pa) conditions. We could fabricate uniform and high quality muc-Si films with very high deposition rates and very high gas utilization efficiencies by using LPC-CVD. The maximum deposition rates of 4.1 nm/s for muc-Si and 5.7 nm/s for a-Si have been also achieved. This method is expected to be effective for larger-area deposition</abstract><pub>IEEE</pub><doi>10.1109/WCPEC.2006.279787</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0160-8371 |
| ispartof | 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006, Vol.2, p.1580-1583 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_4059953 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Cathodes Crystallization Electrodes Linear predictive coding Photovoltaic cells Plasma confinement Plasma stability Semiconductor thin films Sputtering Substrates |
| title | Development of Localized Plasma Confinement (LPC) CVD method for high rate and uniform deposition of thin-film crystalline Si |
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