Large Area Screen Printed N-Type MC-SI Solar cells With B-Emitter: Efficiencies Close to 15% and Innovative Module Interconnection
In this paper we present n-type Si solar cells on large area mc-Si wafers with a boron diffused emitter at the front side. The focus of our studies is mainly related to the front surface of the solar cell. We have optimised BBr 3 -diffusion and in-situ oxidation with respect to the homogeneity of th...
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| creator | Buck, T. Kopecek, R. Libal, J. Petres, R. Peter, K. Rover, I. Wambach, K. Geerligs, L.J. Wefringhaus, E. Fath, P. |
| description | In this paper we present n-type Si solar cells on large area mc-Si wafers with a boron diffused emitter at the front side. The focus of our studies is mainly related to the front surface of the solar cell. We have optimised BBr 3 -diffusion and in-situ oxidation with respect to the homogeneity of the sheet resistance and substrate degradation. After diffusion even a slight improvement of the minority charge carrier lifetime was measured, which can be related to B-gettering. The emitter is contacted by AgAl-paste and passivated by thermal SiO 2 . The development and optimisation of all processes led to solar cells with efficiencies of 14.7% on mc-Si and 17.1% on Cz-Si substrates. In addition to this we present an innovative interconnection of modules using our developed cell (patent pending). We show an alternate serial interconnection of p- and n-type solar cells resulting in easier module processing |
| doi_str_mv | 10.1109/WCPEC.2006.279323 |
| format | Conference Proceeding |
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The focus of our studies is mainly related to the front surface of the solar cell. We have optimised BBr 3 -diffusion and in-situ oxidation with respect to the homogeneity of the sheet resistance and substrate degradation. After diffusion even a slight improvement of the minority charge carrier lifetime was measured, which can be related to B-gettering. The emitter is contacted by AgAl-paste and passivated by thermal SiO 2 . The development and optimisation of all processes led to solar cells with efficiencies of 14.7% on mc-Si and 17.1% on Cz-Si substrates. In addition to this we present an innovative interconnection of modules using our developed cell (patent pending). We show an alternate serial interconnection of p- and n-type solar cells resulting in easier module processing</description><subject>Boron</subject><subject>Charge measurement</subject><subject>Current measurement</subject><subject>Degradation</subject><subject>Furnaces</subject><subject>Oxidation</subject><subject>Photovoltaic cells</subject><subject>Silicon</subject><subject>Surface resistance</subject><subject>Temperature</subject><issn>0160-8371</issn><isbn>1424400163</isbn><isbn>9781424400164</isbn><isbn>1424400171</isbn><isbn>9781424400171</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFjEFLwzAYhiMquE1_gHjJxWPnl6RJWm-zVC1MHWyw48jSrxrp0pHGwa7-cgsKHl4e3heel5BrBlPGIL9bF4uymHIANeU6F1yckDFLeZoCMM1O_4sSZ2Q0AJJMaHZBxn3_CcBBKDYi33MT3pHOAhq6tAHR00VwPmJNX5PVcY_0pUiWFV12rQnUYtv2dO3iB31Iyp2LEcM9LZvGWYd-SE-LtuuRxo4yeUuNr2nlfXcw0R2Gq67-anFYBs123qONrvOX5LwxbY9Xf5yQ1WO5Kp6T-dtTVczmiWNaxkQg4zrjwBU3W6klark1DXCNkEuQuW0E41YpyOu8ro1UqskANGR1s1WWiwm5-b11iLjZB7cz4bhJBzNjqfgBQYhfhQ</recordid><startdate>200605</startdate><enddate>200605</enddate><creator>Buck, T.</creator><creator>Kopecek, R.</creator><creator>Libal, J.</creator><creator>Petres, R.</creator><creator>Peter, K.</creator><creator>Rover, I.</creator><creator>Wambach, K.</creator><creator>Geerligs, L.J.</creator><creator>Wefringhaus, E.</creator><creator>Fath, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200605</creationdate><title>Large Area Screen Printed N-Type MC-SI Solar cells With B-Emitter: Efficiencies Close to 15% and Innovative Module Interconnection</title><author>Buck, T. ; Kopecek, R. ; Libal, J. ; Petres, R. ; Peter, K. ; Rover, I. ; Wambach, K. ; Geerligs, L.J. ; Wefringhaus, E. ; Fath, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-3e127820262ab575e75baf027e095059cf312c6609d9dda566f800708dfb6c23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Boron</topic><topic>Charge measurement</topic><topic>Current measurement</topic><topic>Degradation</topic><topic>Furnaces</topic><topic>Oxidation</topic><topic>Photovoltaic cells</topic><topic>Silicon</topic><topic>Surface resistance</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Buck, T.</creatorcontrib><creatorcontrib>Kopecek, R.</creatorcontrib><creatorcontrib>Libal, J.</creatorcontrib><creatorcontrib>Petres, R.</creatorcontrib><creatorcontrib>Peter, K.</creatorcontrib><creatorcontrib>Rover, I.</creatorcontrib><creatorcontrib>Wambach, K.</creatorcontrib><creatorcontrib>Geerligs, L.J.</creatorcontrib><creatorcontrib>Wefringhaus, E.</creatorcontrib><creatorcontrib>Fath, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Buck, T.</au><au>Kopecek, R.</au><au>Libal, J.</au><au>Petres, R.</au><au>Peter, K.</au><au>Rover, I.</au><au>Wambach, K.</au><au>Geerligs, L.J.</au><au>Wefringhaus, E.</au><au>Fath, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Large Area Screen Printed N-Type MC-SI Solar cells With B-Emitter: Efficiencies Close to 15% and Innovative Module Interconnection</atitle><btitle>2006 IEEE 4th World Conference on Photovoltaic Energy Conference</btitle><stitle>WCPEC</stitle><date>2006-05</date><risdate>2006</risdate><volume>1</volume><spage>1060</spage><epage>1063</epage><pages>1060-1063</pages><issn>0160-8371</issn><isbn>1424400163</isbn><isbn>9781424400164</isbn><eisbn>1424400171</eisbn><eisbn>9781424400171</eisbn><abstract>In this paper we present n-type Si solar cells on large area mc-Si wafers with a boron diffused emitter at the front side. The focus of our studies is mainly related to the front surface of the solar cell. We have optimised BBr 3 -diffusion and in-situ oxidation with respect to the homogeneity of the sheet resistance and substrate degradation. After diffusion even a slight improvement of the minority charge carrier lifetime was measured, which can be related to B-gettering. The emitter is contacted by AgAl-paste and passivated by thermal SiO 2 . The development and optimisation of all processes led to solar cells with efficiencies of 14.7% on mc-Si and 17.1% on Cz-Si substrates. In addition to this we present an innovative interconnection of modules using our developed cell (patent pending). We show an alternate serial interconnection of p- and n-type solar cells resulting in easier module processing</abstract><pub>IEEE</pub><doi>10.1109/WCPEC.2006.279323</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0160-8371 |
| ispartof | 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006, Vol.1, p.1060-1063 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_4059814 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Boron Charge measurement Current measurement Degradation Furnaces Oxidation Photovoltaic cells Silicon Surface resistance Temperature |
| title | Large Area Screen Printed N-Type MC-SI Solar cells With B-Emitter: Efficiencies Close to 15% and Innovative Module Interconnection |
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