PECVD Silicon Nitride Surface Passivation for High-Efficiency N-Type Silicon Solar Cells
In this paper, we show that plasma-enhanced chemical vapor deposited silicon nitride is particularly well suited for surface passivation of n-type silicon wafers and solar cells. The surface passivation quality provided by the silicon nitride on three different important surfaces for high-efficiency...
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| creator | Chen, F.W. Li, T.-T.A. Cotter, J.E. |
| description | In this paper, we show that plasma-enhanced chemical vapor deposited silicon nitride is particularly well suited for surface passivation of n-type silicon wafers and solar cells. The surface passivation quality provided by the silicon nitride on three different important surfaces for high-efficiency n-type solar cells is studied in this work: planar, textured, and boron-diffused surfaces. Exceptional passivation quality on these surfaces is demonstrated in this work. One-sun implied open-circuit voltages of 732 mV, 719 mV, and 683 mV were achieved on 1 ohm.cm planar, 1 ohm.cm textured, and moderately doped (135 ohm/sq) boron-diffused planar surfaces, respectively. A real open-circuit voltage of 719 mV was measured at approximately 1-Sun, 25 degC condition on a voltage test structure device passivated entirely with silicon nitride |
| doi_str_mv | 10.1109/WCPEC.2006.279292 |
| format | Conference Proceeding |
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The surface passivation quality provided by the silicon nitride on three different important surfaces for high-efficiency n-type solar cells is studied in this work: planar, textured, and boron-diffused surfaces. Exceptional passivation quality on these surfaces is demonstrated in this work. One-sun implied open-circuit voltages of 732 mV, 719 mV, and 683 mV were achieved on 1 ohm.cm planar, 1 ohm.cm textured, and moderately doped (135 ohm/sq) boron-diffused planar surfaces, respectively. 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A real open-circuit voltage of 719 mV was measured at approximately 1-Sun, 25 degC condition on a voltage test structure device passivated entirely with silicon nitride</description><subject>Boron</subject><subject>Chemicals</subject><subject>Hafnium</subject><subject>Passivation</subject><subject>Photovoltaic cells</subject><subject>Plasma chemistry</subject><subject>Silicon compounds</subject><subject>Surface texture</subject><subject>Surface treatment</subject><subject>Voltage</subject><issn>0160-8371</issn><isbn>1424400163</isbn><isbn>9781424400164</isbn><isbn>1424400171</isbn><isbn>9781424400171</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFjF1LwzAYRiMquE1_gHiTP9D65k2aj0upmxPGHHR-3I00TTVS19FUof_egqJXh4eHcwi5ZJAyBub6Od_M8xQBZIrKoMEjMmUChQBgih3_D8lPyGQEJJordkamMb4DIHDJJuRljDzd0iI0wbV7ug59FypPi8-uts7TjY0xfNk-jF_ddnQZXt-SeV0HF_zeDXSdbIeD_9OLtrEdzX3TxHNyWtsm-otfzsjjYr7Nl8nq4e4-v1klDpH3ia5Qgi0ZZlYYwQ0D5Wontal0aQErcJyXGXBfCgWSC-UrjVZqwVFKZjM-I1c_3eC93x268GG7YScgMxoE_wbbkFFN</recordid><startdate>200605</startdate><enddate>200605</enddate><creator>Chen, F.W.</creator><creator>Li, T.-T.A.</creator><creator>Cotter, J.E.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200605</creationdate><title>PECVD Silicon Nitride Surface Passivation for High-Efficiency N-Type Silicon Solar Cells</title><author>Chen, F.W. ; Li, T.-T.A. ; Cotter, J.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c223t-8d260ab125a49439107cfc689d8ba02d0c33b503eb4706347ed82a68432661a53</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Boron</topic><topic>Chemicals</topic><topic>Hafnium</topic><topic>Passivation</topic><topic>Photovoltaic cells</topic><topic>Plasma chemistry</topic><topic>Silicon compounds</topic><topic>Surface texture</topic><topic>Surface treatment</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, F.W.</creatorcontrib><creatorcontrib>Li, T.-T.A.</creatorcontrib><creatorcontrib>Cotter, J.E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, F.W.</au><au>Li, T.-T.A.</au><au>Cotter, J.E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>PECVD Silicon Nitride Surface Passivation for High-Efficiency N-Type Silicon Solar Cells</atitle><btitle>2006 IEEE 4th World Conference on Photovoltaic Energy Conference</btitle><stitle>WCPEC</stitle><date>2006-05</date><risdate>2006</risdate><volume>1</volume><spage>1020</spage><epage>1023</epage><pages>1020-1023</pages><issn>0160-8371</issn><isbn>1424400163</isbn><isbn>9781424400164</isbn><eisbn>1424400171</eisbn><eisbn>9781424400171</eisbn><abstract>In this paper, we show that plasma-enhanced chemical vapor deposited silicon nitride is particularly well suited for surface passivation of n-type silicon wafers and solar cells. The surface passivation quality provided by the silicon nitride on three different important surfaces for high-efficiency n-type solar cells is studied in this work: planar, textured, and boron-diffused surfaces. Exceptional passivation quality on these surfaces is demonstrated in this work. One-sun implied open-circuit voltages of 732 mV, 719 mV, and 683 mV were achieved on 1 ohm.cm planar, 1 ohm.cm textured, and moderately doped (135 ohm/sq) boron-diffused planar surfaces, respectively. A real open-circuit voltage of 719 mV was measured at approximately 1-Sun, 25 degC condition on a voltage test structure device passivated entirely with silicon nitride</abstract><pub>IEEE</pub><doi>10.1109/WCPEC.2006.279292</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0160-8371 |
| ispartof | 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006, Vol.1, p.1020-1023 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_4059804 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Boron Chemicals Hafnium Passivation Photovoltaic cells Plasma chemistry Silicon compounds Surface texture Surface treatment Voltage |
| title | PECVD Silicon Nitride Surface Passivation for High-Efficiency N-Type Silicon Solar Cells |
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