An 11 W Ku-band heterostructure FET with WSi/Au T-shaped gate

An 11 W Ku-band heterostructure FET with WSi/Au T-shaped gate

We developed a heterostructure FET (HFET) with a high output power and a high power-added efficiency (PAE) at Ku-band. 8 W and 11.2 W output powers were obtained with power-added efficiencies of 48% and 41% and linear gains of 9 dB and 8.6 dB at 12 GHz, respectively. This is the highest power and ef...

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Hauptverfasser: Udomoto, J., Chaki, S., Komaru, M., Kunii, T., Kohno, Y., Goto, S., Gotoh, K., Inoue, A., Tanino, N., Takagi, T., Ishihara, O.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Artificial intelligence
Frequency
Gallium arsenide
Gold
HEMTs
MESFETs
Microwave FETs
MODFETs
Power generation
Thermal resistance
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Beschreibung
Zusammenfassung:We developed a heterostructure FET (HFET) with a high output power and a high power-added efficiency (PAE) at Ku-band. 8 W and 11.2 W output powers were obtained with power-added efficiencies of 48% and 41% and linear gains of 9 dB and 8.6 dB at 12 GHz, respectively. This is the highest power and efficiency ever reported which is achieved by a single FET chip at this frequency.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1995.405974