A high performance, high yield, dry-etched, pseudomorphic HEMT for W-band use

A GaAs pseudomorphic HEMT process has been optimised for high performance and yield at W-band. Several key nano-fabrication techniques are explored for performance, manufacturability and process sensitivity. The molecular beam epitaxially grown pHEMT layer is optimised for reduced short channel effe...

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Hauptverfasser:	Cameron, N.I., Taylor, M.R.S., McLelland, H., Holland, M., Thayne, I.G., Elgaid, K., Beaumont, S.P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Etching Fingers Frequency Gallium arsenide Indium phosphide Lithography MMICs Molecular beam epitaxial growth PHEMTs Transconductance
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container_end_page	438 vol.2
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creator	Cameron, N.I. Taylor, M.R.S. McLelland, H. Holland, M. Thayne, I.G. Elgaid, K. Beaumont, S.P.
description	A GaAs pseudomorphic HEMT process has been optimised for high performance and yield at W-band. Several key nano-fabrication techniques are explored for performance, manufacturability and process sensitivity. The molecular beam epitaxially grown pHEMT layer is optimised for reduced short channel effects, high transconductance (690 mS/mm) and reliability. Electron-beam lithography produces ultra short T-gates with high reproducibility. Selective reactive ion etching enables both the depth and width of the gate recess to be accurately controlled. 0.2 /spl mu/m pHEMTs with two 50 /spl mu/m gate fingers exhibit average values for f/sub T/ and f/sub max/ of 121 and 157 GHz with low standard deviations of 4.6 and 2.9 GHz respectively.< >
doi_str_mv	10.1109/MWSYM.1995.405952
format	Conference Proceeding
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Etching Fingers Frequency Gallium arsenide Indium phosphide Lithography MMICs Molecular beam epitaxial growth PHEMTs Transconductance
title	A high performance, high yield, dry-etched, pseudomorphic HEMT for W-band use
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