A Unified Behavior Model of Low Noise Amplifier for System-Level Simulation

This paper presents a unified RF behavior model that simultaneously predicts the effects of noise, nonlinearity, impedance matching and frequency response and that enables efficient and accurate system simulation. The proposed modeling approach allows characterizing the RF effects incrementally to r...

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Hauptverfasser: Chih-De Hung, Wen-Shen Wuen, Mei-Fen Chou, Wen, K.-A.
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Wen-Shen Wuen
Mei-Fen Chou
Wen, K.-A.
description This paper presents a unified RF behavior model that simultaneously predicts the effects of noise, nonlinearity, impedance matching and frequency response and that enables efficient and accurate system simulation. The proposed modeling approach allows characterizing the RF effects incrementally to reduce iteration. A Verilog-A behavior model for an ultra-wideband CMOS low noise amplifier is developed for fast and accurate system simulation. The system simulation results show that the behavior model agrees well with the transistor-level circuit with RMS error less than 0.79%. Ultimately, 87% reduction of simulation time is achieved
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subjects Circuit simulation
Frequency response
Hardware design languages
Impedance matching
low noise amplifier
Low-noise amplifiers
Predictive models
Radio frequency
Radiofrequency amplifiers
RF behavior model
Semiconductor device modeling
Ultra wideband technology
title A Unified Behavior Model of Low Noise Amplifier for System-Level Simulation
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