Reduced Charge Diffusion in Thick, Fully Depleted CCDs With Enhanced Red Sensitivity

Lateral charge diffusion in charge-coupled devices (CCDs) dominates the device point-spread function (PSF), which can affect both image quality and spectroscopic resolution. We present new data and theoretical interpretations for lateral charge diffusion in thick, fully depleted CCDs developed at La...

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Veröffentlicht in:	IEEE transactions on nuclear science 2006-12, Vol.53 (6), p.3877-3881
Hauptverfasser:	Fairfield, J.A., Groom, D.E., Bailey, S.J., Bebek, C.J., Holland, S.E., Karcher, A., Koble, W.F., Lorenzon, W., Roe, N.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Acceleration Bias Charge Charge coupled devices Charge measurement Charge-coupled device (CCD) Current measurement Depletion Devices Diffusion diffusion processes Electric potential high-resistivity silicon Image quality Image resolution Laboratories optical transfer functions Probes Spectroscopy Voltage Voltage control
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