Matching Networks Etched on High Dielectric Constant Substrates for Power MESFET Modeling

Presented in this paper are the results of simulation of matching networks for power MESFET's. The technique of modeling is based on substitution of coupled microstrip by equivalent single microstrip placed inside magnet field webs. The designated power MESFET has L - C - L type matching networ...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chepurnykh, I.P., Silin, R.A., Pchelin, V.A., Pashkovskii, A.B., Manchenko, L.V., Klimova, A.V., Galdetckii, A.V.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bonding Capacitors Ceramics Couplings Dielectric substrates Etching High-K gate dielectrics Inductors MESFETs Microstrip
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