Identification of a Novel BTS and RVB Failure Mechanism in Copper/Ultra-Low k Integrations using a Stopless Trench Etch

We have discovered a novel failure mode in M2-M2 intralevel bias temperature stress (BTS) and ramp voltage breakdown (RVB) testing, in which the failure is mediated by shorting between the M2 and M1 metal layers. It has been observed in two copper/ultra-low k integration flows in the early stages of...

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Bibliographische Detailangaben

Hauptverfasser:	Smith, L., Engbrecht, W., Solomentsev, Y., Neuman, K., McGowan, R., Pfeifer, K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Copper Current measurement Dielectrics Etching Failure analysis Fingers Leakage current Temperature Testing Voltage
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