Ultra-Short-Channel Characteristics of Planar MOSFETs With Block Oxide
In this work, the investigation of block oxide used in planar MOSFETs has been studied. To solve these above issues and for the comparison, we propose two novel device architectures; one is called the FDSOI with block oxide (bFDSOI) and the other is called the Si on partial insulator with block oxid...
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| creator | Jyi-Tsong Lin Yi-Chuen Eng Kuo-Dong Huang Tai-Yi Lee Kao-Cheng Lin |
| description | In this work, the investigation of block oxide used in planar MOSFETs has been studied. To solve these above issues and for the comparison, we propose two novel device architectures; one is called the FDSOI with block oxide (bFDSOI) and the other is called the Si on partial insulator with block oxide field-effect transistor (bSPIFET) |
| doi_str_mv | 10.1109/IPFA.2006.251017 |
| format | Conference Proceeding |
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| ispartof | 2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2006, p.146-149 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Chemical technology Dry etching FETs Lithography MOSFETs Planarization Scanning electron microscopy Silicon on insulator technology Wet etching |
| title | Ultra-Short-Channel Characteristics of Planar MOSFETs With Block Oxide |
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