Field-Emission Breakdown and Electromigration in Insulated Planar Nanoscopic Contacts
Planar nanoscopic contacts are observed to undergo early electrical breakdown. The authors show that the cause is high field emission capable of triggering electromigration. The phenomenon is well described by an empirical current-voltage law, well different from that usually found in nonflat field...
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| Veröffentlicht in: | IEEE transactions on electron devices 2006-12, Vol.53 (12), p.2958-2964 |
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| container_issue | 12 |
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| container_title | IEEE transactions on electron devices |
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| creator | Bramanti, A. Maruccio, G. Visconti, P. D'Amico, S. Cingolani, R. Rinaldi, R. |
| description | Planar nanoscopic contacts are observed to undergo early electrical breakdown. The authors show that the cause is high field emission capable of triggering electromigration. The phenomenon is well described by an empirical current-voltage law, well different from that usually found in nonflat field emitters; this is attributed to the particular geometry of the contacts. Although the mathematical form of the law is always the same, the intensity of breakdown current changes from sample to sample, ranging over several orders of magnitude; this is explained by the nanoscopic roughness of the emitting surfaces. They also show that the occurrence of breakdown may be dependent on the polarity of the applied voltage |
| doi_str_mv | 10.1109/TED.2006.885659 |
| format | Article |
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The authors show that the cause is high field emission capable of triggering electromigration. The phenomenon is well described by an empirical current-voltage law, well different from that usually found in nonflat field emitters; this is attributed to the particular geometry of the contacts. Although the mathematical form of the law is always the same, the intensity of breakdown current changes from sample to sample, ranging over several orders of magnitude; this is explained by the nanoscopic roughness of the emitting surfaces. 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The authors show that the cause is high field emission capable of triggering electromigration. The phenomenon is well described by an empirical current-voltage law, well different from that usually found in nonflat field emitters; this is attributed to the particular geometry of the contacts. Although the mathematical form of the law is always the same, the intensity of breakdown current changes from sample to sample, ranging over several orders of magnitude; this is explained by the nanoscopic roughness of the emitting surfaces. They also show that the occurrence of breakdown may be dependent on the polarity of the applied voltage</description><subject>Applied sciences</subject><subject>Contacts</subject><subject>electric breakdown</subject><subject>electromigration</subject><subject>electron emission</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Optoelectronics. Solid state devices</topic><topic>Vacuum microelectronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bramanti, A.</creatorcontrib><creatorcontrib>Maruccio, G.</creatorcontrib><creatorcontrib>Visconti, P.</creatorcontrib><creatorcontrib>D'Amico, S.</creatorcontrib><creatorcontrib>Cingolani, R.</creatorcontrib><creatorcontrib>Rinaldi, R.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bramanti, A.</au><au>Maruccio, G.</au><au>Visconti, P.</au><au>D'Amico, S.</au><au>Cingolani, R.</au><au>Rinaldi, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Field-Emission Breakdown and Electromigration in Insulated Planar Nanoscopic Contacts</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2006-12-01</date><risdate>2006</risdate><volume>53</volume><issue>12</issue><spage>2958</spage><epage>2964</epage><pages>2958-2964</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Planar nanoscopic contacts are observed to undergo early electrical breakdown. The authors show that the cause is high field emission capable of triggering electromigration. The phenomenon is well described by an empirical current-voltage law, well different from that usually found in nonflat field emitters; this is attributed to the particular geometry of the contacts. Although the mathematical form of the law is always the same, the intensity of breakdown current changes from sample to sample, ranging over several orders of magnitude; this is explained by the nanoscopic roughness of the emitting surfaces. They also show that the occurrence of breakdown may be dependent on the polarity of the applied voltage</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2006.885659</doi><tpages>7</tpages></addata></record> |
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| subjects | Applied sciences Contacts electric breakdown electromigration electron emission Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Vacuum microelectronics |
| title | Field-Emission Breakdown and Electromigration in Insulated Planar Nanoscopic Contacts |
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