65GHz Doppler Sensor with On-Chip Antenna in 0.18μm SiGe BiCMOS
A single-chip 65GHz Doppler radar transceiver with on-chip patch antenna is reported. Implemented in a production 0.18mum SiGe BiCMOS process, it features a differential output transmit power of 4.3dBm, 16.5dB single-ended down-conversion gain and a double-sideband noise figure of 12.8dB. The radar...
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creator | Yao, T. Tchoketch-Kebir, L. Yuryevich, O. Gordon, M. Voinigescu, S.P. |
description | A single-chip 65GHz Doppler radar transceiver with on-chip patch antenna is reported. Implemented in a production 0.18mum SiGe BiCMOS process, it features a differential output transmit power of 4.3dBm, 16.5dB single-ended down-conversion gain and a double-sideband noise figure of 12.8dB. The radar includes a 65GHz 2-stage cascode LNA with S 11 |
doi_str_mv | 10.1109/MWSYM.2006.249575 |
format | Conference Proceeding |
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Implemented in a production 0.18mum SiGe BiCMOS process, it features a differential output transmit power of 4.3dBm, 16.5dB single-ended down-conversion gain and a double-sideband noise figure of 12.8dB. The radar includes a 65GHz 2-stage cascode LNA with S 11 <-15dB at 50-94GHz and 14dB gain at 65GHz, a double-balanced down-convert mixer, a SiGe HBT IF amplifier with low 1/f noise, a VCO and a 65GHz output buffer. The LO is provided by an integrated varactor-tuned 61-67GHz VCO optimized for low phase noise. The patch antenna is designed to be impedance-matched for dual-band operation at 62.8 and 64.6GHz. The use of lumped inductors in all blocks and a vertically-stacked transformer for single-ended to differential conversion in the receive path help reduce the transceiver area to 1mm times 1mm</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780780395411</identifier><identifier>ISBN: 0780395417</identifier><identifier>DOI: 10.1109/MWSYM.2006.249575</identifier><language>eng</language><publisher>IEEE</publisher><subject>BiCMOS integrated circuits ; Doppler radar ; Germanium silicon alloys ; inductors ; microstrip antennae ; millimeter wave integrated circuits ; Noise figure ; Patch antennas ; Production ; Radar antennas ; Silicon germanium ; Transceivers ; transformers ; Voltage-controlled oscillators</subject><ispartof>2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.1493-1496</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4015216$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4015216$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yao, T.</creatorcontrib><creatorcontrib>Tchoketch-Kebir, L.</creatorcontrib><creatorcontrib>Yuryevich, O.</creatorcontrib><creatorcontrib>Gordon, M.</creatorcontrib><creatorcontrib>Voinigescu, S.P.</creatorcontrib><title>65GHz Doppler Sensor with On-Chip Antenna in 0.18μm SiGe BiCMOS</title><title>2006 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>A single-chip 65GHz Doppler radar transceiver with on-chip patch antenna is reported. 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The use of lumped inductors in all blocks and a vertically-stacked transformer for single-ended to differential conversion in the receive path help reduce the transceiver area to 1mm times 1mm</description><subject>BiCMOS integrated circuits</subject><subject>Doppler radar</subject><subject>Germanium silicon alloys</subject><subject>inductors</subject><subject>microstrip antennae</subject><subject>millimeter wave integrated circuits</subject><subject>Noise figure</subject><subject>Patch antennas</subject><subject>Production</subject><subject>Radar antennas</subject><subject>Silicon germanium</subject><subject>Transceivers</subject><subject>transformers</subject><subject>Voltage-controlled oscillators</subject><issn>0149-645X</issn><isbn>9780780395411</isbn><isbn>0780395417</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjdFKwzAUQAMqOOc-QHzJD7Tem-RmyZuzzk5Y6UMH6tNIS8oiW1bagui3-Q1-kwOFA-ftHMZuEFJEsHfFS_VWpAJAp0JZmtMZm9m5gRPSkkI8ZxNAZROt6PWSXQ3DOwCQQT1h95ry1Rd_PHbd3ve88nE49vwjjDtexiTbhY4v4uhjdDxEfhqan-8Dr0Lu-UPIirK6Zhet2w9-9u8p2zwtN9kqWZf5c7ZYJ8HCmHhJ6BzoBltQDZm6RoXGkdfCK-tsi61tFSlJ0ghhvWiFUVhbqoUDEI2cstu_bPDeb7s-HFz_uVWAJFDLX2QNRqs</recordid><startdate>200606</startdate><enddate>200606</enddate><creator>Yao, T.</creator><creator>Tchoketch-Kebir, L.</creator><creator>Yuryevich, O.</creator><creator>Gordon, M.</creator><creator>Voinigescu, S.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200606</creationdate><title>65GHz Doppler Sensor with On-Chip Antenna in 0.18μm SiGe BiCMOS</title><author>Yao, T. ; Tchoketch-Kebir, L. ; Yuryevich, O. ; Gordon, M. ; Voinigescu, S.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-e351aa06c1f04c58bb1418a5e62e49a9f1f9f4543538229e2f2841b95b2a002c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BiCMOS integrated circuits</topic><topic>Doppler radar</topic><topic>Germanium silicon alloys</topic><topic>inductors</topic><topic>microstrip antennae</topic><topic>millimeter wave integrated circuits</topic><topic>Noise figure</topic><topic>Patch antennas</topic><topic>Production</topic><topic>Radar antennas</topic><topic>Silicon germanium</topic><topic>Transceivers</topic><topic>transformers</topic><topic>Voltage-controlled oscillators</topic><toplevel>online_resources</toplevel><creatorcontrib>Yao, T.</creatorcontrib><creatorcontrib>Tchoketch-Kebir, L.</creatorcontrib><creatorcontrib>Yuryevich, O.</creatorcontrib><creatorcontrib>Gordon, M.</creatorcontrib><creatorcontrib>Voinigescu, S.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yao, T.</au><au>Tchoketch-Kebir, L.</au><au>Yuryevich, O.</au><au>Gordon, M.</au><au>Voinigescu, S.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>65GHz Doppler Sensor with On-Chip Antenna in 0.18μm SiGe BiCMOS</atitle><btitle>2006 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>2006-06</date><risdate>2006</risdate><spage>1493</spage><epage>1496</epage><pages>1493-1496</pages><issn>0149-645X</issn><isbn>9780780395411</isbn><isbn>0780395417</isbn><abstract>A single-chip 65GHz Doppler radar transceiver with on-chip patch antenna is reported. Implemented in a production 0.18mum SiGe BiCMOS process, it features a differential output transmit power of 4.3dBm, 16.5dB single-ended down-conversion gain and a double-sideband noise figure of 12.8dB. The radar includes a 65GHz 2-stage cascode LNA with S 11 <-15dB at 50-94GHz and 14dB gain at 65GHz, a double-balanced down-convert mixer, a SiGe HBT IF amplifier with low 1/f noise, a VCO and a 65GHz output buffer. The LO is provided by an integrated varactor-tuned 61-67GHz VCO optimized for low phase noise. The patch antenna is designed to be impedance-matched for dual-band operation at 62.8 and 64.6GHz. The use of lumped inductors in all blocks and a vertically-stacked transformer for single-ended to differential conversion in the receive path help reduce the transceiver area to 1mm times 1mm</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2006.249575</doi><tpages>4</tpages></addata></record> |
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identifier | ISSN: 0149-645X |
ispartof | 2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.1493-1496 |
issn | 0149-645X |
language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | BiCMOS integrated circuits Doppler radar Germanium silicon alloys inductors microstrip antennae millimeter wave integrated circuits Noise figure Patch antennas Production Radar antennas Silicon germanium Transceivers transformers Voltage-controlled oscillators |
title | 65GHz Doppler Sensor with On-Chip Antenna in 0.18μm SiGe BiCMOS |
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