Integrated Raman - IR Thermography on AlGaN/GaN Transistors
We report on the integrated Raman-IR thermography analysis of AlGaN/GaN heterostructure field effect transistors (HFETs). IR thermography provides fast temperature overviews while micro-Raman enables accurate peak temperature determination with high spatial resolution in selected device areas. Excel...
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| creator | Kuball, M. Sarua, A. Ji, H. Uren, M.J. Balmer, R.S. Martin, T. |
| description | We report on the integrated Raman-IR thermography analysis of AlGaN/GaN heterostructure field effect transistors (HFETs). IR thermography provides fast temperature overviews while micro-Raman enables accurate peak temperature determination with high spatial resolution in selected device areas. Excellent agreement between Raman determined device temperatures and finite difference simulations was achieved in the active device region. IR provided temperature determination over large device areas, and complemented the Raman thermal data. In IR thermography, lateral averaging of temperature in the small active device region resulted in an underestimation of device peak temperature and an overestimation of temperature profile linewidth. Dependent on device layout, depth averaging of device temperature occurs in IR thermography. The developed novel approach opens unique possibilities for the thermal screening of MMICs and reliability optimization |
| doi_str_mv | 10.1109/MWSYM.2006.249496 |
| format | Conference Proceeding |
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IR thermography provides fast temperature overviews while micro-Raman enables accurate peak temperature determination with high spatial resolution in selected device areas. Excellent agreement between Raman determined device temperatures and finite difference simulations was achieved in the active device region. IR provided temperature determination over large device areas, and complemented the Raman thermal data. In IR thermography, lateral averaging of temperature in the small active device region resulted in an underestimation of device peak temperature and an overestimation of temperature profile linewidth. Dependent on device layout, depth averaging of device temperature occurs in IR thermography. The developed novel approach opens unique possibilities for the thermal screening of MMICs and reliability optimization</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780780395411</identifier><identifier>ISBN: 0780395417</identifier><identifier>DOI: 10.1109/MWSYM.2006.249496</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum gallium nitride ; FETs ; Field effect MMICs ; Gallium nitride ; HEMTs ; infrared image sensors ; Materials reliability ; MMICs ; MODFETs ; Raman scattering ; semiconductor device reliability ; semiconductor device thermal factors ; Spatial resolution ; Temperature dependence ; Temperature measurement ; Temperature sensors</subject><ispartof>2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.1339-1342</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4015172$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4015172$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kuball, M.</creatorcontrib><creatorcontrib>Sarua, A.</creatorcontrib><creatorcontrib>Ji, H.</creatorcontrib><creatorcontrib>Uren, M.J.</creatorcontrib><creatorcontrib>Balmer, R.S.</creatorcontrib><creatorcontrib>Martin, T.</creatorcontrib><title>Integrated Raman - IR Thermography on AlGaN/GaN Transistors</title><title>2006 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>We report on the integrated Raman-IR thermography analysis of AlGaN/GaN heterostructure field effect transistors (HFETs). 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The developed novel approach opens unique possibilities for the thermal screening of MMICs and reliability optimization</description><subject>Aluminum gallium nitride</subject><subject>FETs</subject><subject>Field effect MMICs</subject><subject>Gallium nitride</subject><subject>HEMTs</subject><subject>infrared image sensors</subject><subject>Materials reliability</subject><subject>MMICs</subject><subject>MODFETs</subject><subject>Raman scattering</subject><subject>semiconductor device reliability</subject><subject>semiconductor device thermal factors</subject><subject>Spatial resolution</subject><subject>Temperature dependence</subject><subject>Temperature measurement</subject><subject>Temperature sensors</subject><issn>0149-645X</issn><isbn>9780780395411</isbn><isbn>0780395417</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjMFKw0AURQdUsNZ-gLiZH0j73subyQyuStEaaBVqRF2VSTKxkSYpk2z69wYU7uHAWVwh7hDmiGAX24-3r-2cAPSc2LLVF2JmEwPjYqsY8VJMANlGmtXntbjp-x8AUAb1RDyk7eC_gxt8KXeuca2MZLqT2cGHphv76XCWXSuXx7V7WYzILLi2r_uhC_2tuKrcsfezf0_F-9NjtnqONq_rdLXcRDUxDhHZqihyQ3lJhr1yhhS5MsmtNTGQVobRkK6cU6w1mpIr8EUB7AktQ2niqbj_-6299_tTqBsXznsGVJhQ_AujrEYs</recordid><startdate>20060101</startdate><enddate>20060101</enddate><creator>Kuball, M.</creator><creator>Sarua, A.</creator><creator>Ji, H.</creator><creator>Uren, M.J.</creator><creator>Balmer, R.S.</creator><creator>Martin, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>20060101</creationdate><title>Integrated Raman - IR Thermography on AlGaN/GaN Transistors</title><author>Kuball, M. ; Sarua, A. ; Ji, H. ; Uren, M.J. ; Balmer, R.S. ; Martin, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i241t-29fccb82bd284e5a8252ad7b99830265841826faa546618d4f0ecc04e21940d83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Aluminum gallium nitride</topic><topic>FETs</topic><topic>Field effect MMICs</topic><topic>Gallium nitride</topic><topic>HEMTs</topic><topic>infrared image sensors</topic><topic>Materials reliability</topic><topic>MMICs</topic><topic>MODFETs</topic><topic>Raman scattering</topic><topic>semiconductor device reliability</topic><topic>semiconductor device thermal factors</topic><topic>Spatial resolution</topic><topic>Temperature dependence</topic><topic>Temperature measurement</topic><topic>Temperature sensors</topic><toplevel>online_resources</toplevel><creatorcontrib>Kuball, M.</creatorcontrib><creatorcontrib>Sarua, A.</creatorcontrib><creatorcontrib>Ji, H.</creatorcontrib><creatorcontrib>Uren, M.J.</creatorcontrib><creatorcontrib>Balmer, R.S.</creatorcontrib><creatorcontrib>Martin, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kuball, M.</au><au>Sarua, A.</au><au>Ji, H.</au><au>Uren, M.J.</au><au>Balmer, R.S.</au><au>Martin, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Integrated Raman - IR Thermography on AlGaN/GaN Transistors</atitle><btitle>2006 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>2006-01-01</date><risdate>2006</risdate><spage>1339</spage><epage>1342</epage><pages>1339-1342</pages><issn>0149-645X</issn><isbn>9780780395411</isbn><isbn>0780395417</isbn><abstract>We report on the integrated Raman-IR thermography analysis of AlGaN/GaN heterostructure field effect transistors (HFETs). IR thermography provides fast temperature overviews while micro-Raman enables accurate peak temperature determination with high spatial resolution in selected device areas. Excellent agreement between Raman determined device temperatures and finite difference simulations was achieved in the active device region. IR provided temperature determination over large device areas, and complemented the Raman thermal data. In IR thermography, lateral averaging of temperature in the small active device region resulted in an underestimation of device peak temperature and an overestimation of temperature profile linewidth. Dependent on device layout, depth averaging of device temperature occurs in IR thermography. The developed novel approach opens unique possibilities for the thermal screening of MMICs and reliability optimization</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2006.249496</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.1339-1342 |
| issn | 0149-645X |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aluminum gallium nitride FETs Field effect MMICs Gallium nitride HEMTs infrared image sensors Materials reliability MMICs MODFETs Raman scattering semiconductor device reliability semiconductor device thermal factors Spatial resolution Temperature dependence Temperature measurement Temperature sensors |
| title | Integrated Raman - IR Thermography on AlGaN/GaN Transistors |
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