Broadband Class-E Power Amplifier for HF and VHF
The power amplifier described here uses a 50-V gemini MOSFET and operates in class E to produce up to 200 W from 1.8 to 128 MHz. The circuit incorporates a broadband input so that frequency changes require only retuning or switching of the output filter. The efficiency varies from 90 percent at 1.8...
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creator | Raab, F.H. |
description | The power amplifier described here uses a 50-V gemini MOSFET and operates in class E to produce up to 200 W from 1.8 to 128 MHz. The circuit incorporates a broadband input so that frequency changes require only retuning or switching of the output filter. The efficiency varies from 90 percent at 1.8 MHz to 70 percent at 128 MHz. The amplitude-modulation linearity is excellent, making it well suited for use in a Kahn-technique (EER) transmitter |
doi_str_mv | 10.1109/MWSYM.2006.249839 |
format | Conference Proceeding |
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The circuit incorporates a broadband input so that frequency changes require only retuning or switching of the output filter. The efficiency varies from 90 percent at 1.8 MHz to 70 percent at 128 MHz. The amplitude-modulation linearity is excellent, making it well suited for use in a Kahn-technique (EER) transmitter</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780780395411</identifier><identifier>ISBN: 0780395417</identifier><identifier>DOI: 10.1109/MWSYM.2006.249839</identifier><language>eng</language><publisher>IEEE</publisher><subject>Broadband amplifiers ; class E ; Filters ; Frequency ; Hafnium ; Linearity ; MOSFET ; MOSFET circuits ; Power amplifier ; Power amplifiers ; Power MOSFET ; Switching circuits ; VHF ; VHF circuits</subject><ispartof>2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.902-905</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4015057$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4015057$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Raab, F.H.</creatorcontrib><title>Broadband Class-E Power Amplifier for HF and VHF</title><title>2006 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>The power amplifier described here uses a 50-V gemini MOSFET and operates in class E to produce up to 200 W from 1.8 to 128 MHz. The circuit incorporates a broadband input so that frequency changes require only retuning or switching of the output filter. The efficiency varies from 90 percent at 1.8 MHz to 70 percent at 128 MHz. The amplitude-modulation linearity is excellent, making it well suited for use in a Kahn-technique (EER) transmitter</description><subject>Broadband amplifiers</subject><subject>class E</subject><subject>Filters</subject><subject>Frequency</subject><subject>Hafnium</subject><subject>Linearity</subject><subject>MOSFET</subject><subject>MOSFET circuits</subject><subject>Power amplifier</subject><subject>Power amplifiers</subject><subject>Power MOSFET</subject><subject>Switching circuits</subject><subject>VHF</subject><subject>VHF circuits</subject><issn>0149-645X</issn><isbn>9780780395411</isbn><isbn>0780395417</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjF1LwzAYhQMqOOd-gHiTP9D6vkvefFzOslphQ8Hvq5E0CUQ6O1pB_PdWFM7hORcPh7ELhBIR7NX25eFtWy4BVLmU1gh7xBZWG5giLEnEYzYDlLZQkl5P2dk4vgMAGVQzBtdD74J3H4FXnRvHYs3v-6848NX-0OWUp5X6gTc1_1Wem_qcnSTXjXHxzzl7qtePVVNs7m5uq9WmyKjpszAokpcUo9HoFQhyPkkz1XvlY2tCMNIp10apiXQKaCC0ZLXzNiRFVszZ5d9vjjHuDkPeu-F7JwEJSIsfMDJDKQ</recordid><startdate>200606</startdate><enddate>200606</enddate><creator>Raab, F.H.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200606</creationdate><title>Broadband Class-E Power Amplifier for HF and VHF</title><author>Raab, F.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-813fb45ee871b6035abf48bf4bb6bec8dd84a6ace47557fd180dc597ab9df6593</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Broadband amplifiers</topic><topic>class E</topic><topic>Filters</topic><topic>Frequency</topic><topic>Hafnium</topic><topic>Linearity</topic><topic>MOSFET</topic><topic>MOSFET circuits</topic><topic>Power amplifier</topic><topic>Power amplifiers</topic><topic>Power MOSFET</topic><topic>Switching circuits</topic><topic>VHF</topic><topic>VHF circuits</topic><toplevel>online_resources</toplevel><creatorcontrib>Raab, F.H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Raab, F.H.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Broadband Class-E Power Amplifier for HF and VHF</atitle><btitle>2006 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>2006-06</date><risdate>2006</risdate><spage>902</spage><epage>905</epage><pages>902-905</pages><issn>0149-645X</issn><isbn>9780780395411</isbn><isbn>0780395417</isbn><abstract>The power amplifier described here uses a 50-V gemini MOSFET and operates in class E to produce up to 200 W from 1.8 to 128 MHz. The circuit incorporates a broadband input so that frequency changes require only retuning or switching of the output filter. The efficiency varies from 90 percent at 1.8 MHz to 70 percent at 128 MHz. The amplitude-modulation linearity is excellent, making it well suited for use in a Kahn-technique (EER) transmitter</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2006.249839</doi><tpages>4</tpages></addata></record> |
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identifier | ISSN: 0149-645X |
ispartof | 2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.902-905 |
issn | 0149-645X |
language | eng |
recordid | cdi_ieee_primary_4015057 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Broadband amplifiers class E Filters Frequency Hafnium Linearity MOSFET MOSFET circuits Power amplifier Power amplifiers Power MOSFET Switching circuits VHF VHF circuits |
title | Broadband Class-E Power Amplifier for HF and VHF |
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