Broadband Class-E Power Amplifier for HF and VHF

The power amplifier described here uses a 50-V gemini MOSFET and operates in class E to produce up to 200 W from 1.8 to 128 MHz. The circuit incorporates a broadband input so that frequency changes require only retuning or switching of the output filter. The efficiency varies from 90 percent at 1.8...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Raab, F.H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 905
container_issue
container_start_page 902
container_title
container_volume
creator Raab, F.H.
description The power amplifier described here uses a 50-V gemini MOSFET and operates in class E to produce up to 200 W from 1.8 to 128 MHz. The circuit incorporates a broadband input so that frequency changes require only retuning or switching of the output filter. The efficiency varies from 90 percent at 1.8 MHz to 70 percent at 128 MHz. The amplitude-modulation linearity is excellent, making it well suited for use in a Kahn-technique (EER) transmitter
doi_str_mv 10.1109/MWSYM.2006.249839
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4015057</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4015057</ieee_id><sourcerecordid>4015057</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-813fb45ee871b6035abf48bf4bb6bec8dd84a6ace47557fd180dc597ab9df6593</originalsourceid><addsrcrecordid>eNotjF1LwzAYhQMqOOd-gHiTP9D6vkvefFzOslphQ8Hvq5E0CUQ6O1pB_PdWFM7hORcPh7ELhBIR7NX25eFtWy4BVLmU1gh7xBZWG5giLEnEYzYDlLZQkl5P2dk4vgMAGVQzBtdD74J3H4FXnRvHYs3v-6848NX-0OWUp5X6gTc1_1Wem_qcnSTXjXHxzzl7qtePVVNs7m5uq9WmyKjpszAokpcUo9HoFQhyPkkz1XvlY2tCMNIp10apiXQKaCC0ZLXzNiRFVszZ5d9vjjHuDkPeu-F7JwEJSIsfMDJDKQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Broadband Class-E Power Amplifier for HF and VHF</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Raab, F.H.</creator><creatorcontrib>Raab, F.H.</creatorcontrib><description>The power amplifier described here uses a 50-V gemini MOSFET and operates in class E to produce up to 200 W from 1.8 to 128 MHz. The circuit incorporates a broadband input so that frequency changes require only retuning or switching of the output filter. The efficiency varies from 90 percent at 1.8 MHz to 70 percent at 128 MHz. The amplitude-modulation linearity is excellent, making it well suited for use in a Kahn-technique (EER) transmitter</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780780395411</identifier><identifier>ISBN: 0780395417</identifier><identifier>DOI: 10.1109/MWSYM.2006.249839</identifier><language>eng</language><publisher>IEEE</publisher><subject>Broadband amplifiers ; class E ; Filters ; Frequency ; Hafnium ; Linearity ; MOSFET ; MOSFET circuits ; Power amplifier ; Power amplifiers ; Power MOSFET ; Switching circuits ; VHF ; VHF circuits</subject><ispartof>2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.902-905</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4015057$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4015057$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Raab, F.H.</creatorcontrib><title>Broadband Class-E Power Amplifier for HF and VHF</title><title>2006 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>The power amplifier described here uses a 50-V gemini MOSFET and operates in class E to produce up to 200 W from 1.8 to 128 MHz. The circuit incorporates a broadband input so that frequency changes require only retuning or switching of the output filter. The efficiency varies from 90 percent at 1.8 MHz to 70 percent at 128 MHz. The amplitude-modulation linearity is excellent, making it well suited for use in a Kahn-technique (EER) transmitter</description><subject>Broadband amplifiers</subject><subject>class E</subject><subject>Filters</subject><subject>Frequency</subject><subject>Hafnium</subject><subject>Linearity</subject><subject>MOSFET</subject><subject>MOSFET circuits</subject><subject>Power amplifier</subject><subject>Power amplifiers</subject><subject>Power MOSFET</subject><subject>Switching circuits</subject><subject>VHF</subject><subject>VHF circuits</subject><issn>0149-645X</issn><isbn>9780780395411</isbn><isbn>0780395417</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjF1LwzAYhQMqOOd-gHiTP9D6vkvefFzOslphQ8Hvq5E0CUQ6O1pB_PdWFM7hORcPh7ELhBIR7NX25eFtWy4BVLmU1gh7xBZWG5giLEnEYzYDlLZQkl5P2dk4vgMAGVQzBtdD74J3H4FXnRvHYs3v-6848NX-0OWUp5X6gTc1_1Wem_qcnSTXjXHxzzl7qtePVVNs7m5uq9WmyKjpszAokpcUo9HoFQhyPkkz1XvlY2tCMNIp10apiXQKaCC0ZLXzNiRFVszZ5d9vjjHuDkPeu-F7JwEJSIsfMDJDKQ</recordid><startdate>200606</startdate><enddate>200606</enddate><creator>Raab, F.H.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200606</creationdate><title>Broadband Class-E Power Amplifier for HF and VHF</title><author>Raab, F.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-813fb45ee871b6035abf48bf4bb6bec8dd84a6ace47557fd180dc597ab9df6593</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Broadband amplifiers</topic><topic>class E</topic><topic>Filters</topic><topic>Frequency</topic><topic>Hafnium</topic><topic>Linearity</topic><topic>MOSFET</topic><topic>MOSFET circuits</topic><topic>Power amplifier</topic><topic>Power amplifiers</topic><topic>Power MOSFET</topic><topic>Switching circuits</topic><topic>VHF</topic><topic>VHF circuits</topic><toplevel>online_resources</toplevel><creatorcontrib>Raab, F.H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Raab, F.H.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Broadband Class-E Power Amplifier for HF and VHF</atitle><btitle>2006 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>2006-06</date><risdate>2006</risdate><spage>902</spage><epage>905</epage><pages>902-905</pages><issn>0149-645X</issn><isbn>9780780395411</isbn><isbn>0780395417</isbn><abstract>The power amplifier described here uses a 50-V gemini MOSFET and operates in class E to produce up to 200 W from 1.8 to 128 MHz. The circuit incorporates a broadband input so that frequency changes require only retuning or switching of the output filter. The efficiency varies from 90 percent at 1.8 MHz to 70 percent at 128 MHz. The amplitude-modulation linearity is excellent, making it well suited for use in a Kahn-technique (EER) transmitter</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2006.249839</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0149-645X
ispartof 2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.902-905
issn 0149-645X
language eng
recordid cdi_ieee_primary_4015057
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Broadband amplifiers
class E
Filters
Frequency
Hafnium
Linearity
MOSFET
MOSFET circuits
Power amplifier
Power amplifiers
Power MOSFET
Switching circuits
VHF
VHF circuits
title Broadband Class-E Power Amplifier for HF and VHF
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T08%3A56%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Broadband%20Class-E%20Power%20Amplifier%20for%20HF%20and%20VHF&rft.btitle=2006%20IEEE%20MTT-S%20International%20Microwave%20Symposium%20Digest&rft.au=Raab,%20F.H.&rft.date=2006-06&rft.spage=902&rft.epage=905&rft.pages=902-905&rft.issn=0149-645X&rft.isbn=9780780395411&rft.isbn_list=0780395417&rft_id=info:doi/10.1109/MWSYM.2006.249839&rft_dat=%3Cieee_6IE%3E4015057%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4015057&rfr_iscdi=true