28V High-Linearity and Rugged InGaP/GaAs Power HBT
This paper reports on the improvement of a previously developed InGaP/GaAs HBT for 24-28V linear power operation. The improvements achieved were: application of dynamic bias circuit which improves the ACLR under WCDMA modulation; modification of device technology improving ruggedness to sustain 10:1...
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| creator | Nanlei Larry Wang Wenlong Ma Sarah Xu Camargo, E. Xiaopeng Sun Hu, P. Zhuang Tang Hin-Fai Frank Chau Amelia Chen Lee, C.P. |
| description | This paper reports on the improvement of a previously developed InGaP/GaAs HBT for 24-28V linear power operation. The improvements achieved were: application of dynamic bias circuit which improves the ACLR under WCDMA modulation; modification of device technology improving ruggedness to sustain 10:1 VSWR at 30V collector bias under P 1dB driving conditions and over 6 dB of gain compression; maintenance of lifetime and reliability simultaneously. Building blocks of HBT were strung together for higher power and good scaling of performance was achieved supporting the validity of the layout approach and the thermal design. Devices delivering P 1dB equiv 8W under CW conditions provided ACLR equiv -50 dBc at 8.5 dB back-off and 16% efficiency for WCDMA signal (PARequiv8.7 dB) at 2.14 GHz. Lifetime test over 3000 hours was repeated for 28V bias and 0.05mA/mum 2 current density at 315 degree C junction temperature. Therefore, the InGaP/GaAs HBT technology is mature now for the high linearity power amplification |
| doi_str_mv | 10.1109/MWSYM.2006.249833 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4015051</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4015051</ieee_id><sourcerecordid>4015051</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-25a85458bf713d36250ba31cdc1bb37d479412a8be1f90f2b35dd8c0dad9c7fd3</originalsourceid><addsrcrecordid>eNotzN9KwzAUgPGACs65BxBv8gLdzklymuRyDm0HHQ6d_65G0qQ1olXaDdnbKyh88Lv7GLtAmCKCna2e7l9WUwGQT4WyRsojNrHawG_SkkI8ZiNAZbNc0fMpOxuGNwAgg_mICWEeeZna16xKXXR92h246wK_27dtDHzZFW49K9x84OvP79jz8mpzzk4a9z7Eyb9j9nBzvVmUWXVbLBfzKkuoaZcJcoYUGd9olEHmgsA7iXWo0Xupg9JWoXDGR2wsNMJLCsHUEFywtW6CHLPLv2-KMW6_-vTh-sNWARIQyh81rELW</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>28V High-Linearity and Rugged InGaP/GaAs Power HBT</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Nanlei Larry Wang ; Wenlong Ma ; Sarah Xu ; Camargo, E. ; Xiaopeng Sun ; Hu, P. ; Zhuang Tang ; Hin-Fai Frank Chau ; Amelia Chen ; Lee, C.P.</creator><creatorcontrib>Nanlei Larry Wang ; Wenlong Ma ; Sarah Xu ; Camargo, E. ; Xiaopeng Sun ; Hu, P. ; Zhuang Tang ; Hin-Fai Frank Chau ; Amelia Chen ; Lee, C.P.</creatorcontrib><description>This paper reports on the improvement of a previously developed InGaP/GaAs HBT for 24-28V linear power operation. The improvements achieved were: application of dynamic bias circuit which improves the ACLR under WCDMA modulation; modification of device technology improving ruggedness to sustain 10:1 VSWR at 30V collector bias under P 1dB driving conditions and over 6 dB of gain compression; maintenance of lifetime and reliability simultaneously. Building blocks of HBT were strung together for higher power and good scaling of performance was achieved supporting the validity of the layout approach and the thermal design. Devices delivering P 1dB equiv 8W under CW conditions provided ACLR equiv -50 dBc at 8.5 dB back-off and 16% efficiency for WCDMA signal (PARequiv8.7 dB) at 2.14 GHz. Lifetime test over 3000 hours was repeated for 28V bias and 0.05mA/mum 2 current density at 315 degree C junction temperature. Therefore, the InGaP/GaAs HBT technology is mature now for the high linearity power amplification</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780780395411</identifier><identifier>ISBN: 0780395417</identifier><identifier>DOI: 10.1109/MWSYM.2006.249833</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuits ; Current density ; Gain ; Gallium arsenide ; Heterojunction bipolar transistor ; Heterojunction bipolar transistors ; interchannel interference ; Lifetime estimation ; Linearity ; Maintenance ; Multiaccess communication ; power amplifiers ; power bipolar amplifiers ; Temperature</subject><ispartof>2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.881-884</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4015051$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,27929,54924</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4015051$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Nanlei Larry Wang</creatorcontrib><creatorcontrib>Wenlong Ma</creatorcontrib><creatorcontrib>Sarah Xu</creatorcontrib><creatorcontrib>Camargo, E.</creatorcontrib><creatorcontrib>Xiaopeng Sun</creatorcontrib><creatorcontrib>Hu, P.</creatorcontrib><creatorcontrib>Zhuang Tang</creatorcontrib><creatorcontrib>Hin-Fai Frank Chau</creatorcontrib><creatorcontrib>Amelia Chen</creatorcontrib><creatorcontrib>Lee, C.P.</creatorcontrib><title>28V High-Linearity and Rugged InGaP/GaAs Power HBT</title><title>2006 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>This paper reports on the improvement of a previously developed InGaP/GaAs HBT for 24-28V linear power operation. The improvements achieved were: application of dynamic bias circuit which improves the ACLR under WCDMA modulation; modification of device technology improving ruggedness to sustain 10:1 VSWR at 30V collector bias under P 1dB driving conditions and over 6 dB of gain compression; maintenance of lifetime and reliability simultaneously. Building blocks of HBT were strung together for higher power and good scaling of performance was achieved supporting the validity of the layout approach and the thermal design. Devices delivering P 1dB equiv 8W under CW conditions provided ACLR equiv -50 dBc at 8.5 dB back-off and 16% efficiency for WCDMA signal (PARequiv8.7 dB) at 2.14 GHz. Lifetime test over 3000 hours was repeated for 28V bias and 0.05mA/mum 2 current density at 315 degree C junction temperature. Therefore, the InGaP/GaAs HBT technology is mature now for the high linearity power amplification</description><subject>Circuits</subject><subject>Current density</subject><subject>Gain</subject><subject>Gallium arsenide</subject><subject>Heterojunction bipolar transistor</subject><subject>Heterojunction bipolar transistors</subject><subject>interchannel interference</subject><subject>Lifetime estimation</subject><subject>Linearity</subject><subject>Maintenance</subject><subject>Multiaccess communication</subject><subject>power amplifiers</subject><subject>power bipolar amplifiers</subject><subject>Temperature</subject><issn>0149-645X</issn><isbn>9780780395411</isbn><isbn>0780395417</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotzN9KwzAUgPGACs65BxBv8gLdzklymuRyDm0HHQ6d_65G0qQ1olXaDdnbKyh88Lv7GLtAmCKCna2e7l9WUwGQT4WyRsojNrHawG_SkkI8ZiNAZbNc0fMpOxuGNwAgg_mICWEeeZna16xKXXR92h246wK_27dtDHzZFW49K9x84OvP79jz8mpzzk4a9z7Eyb9j9nBzvVmUWXVbLBfzKkuoaZcJcoYUGd9olEHmgsA7iXWo0Xupg9JWoXDGR2wsNMJLCsHUEFywtW6CHLPLv2-KMW6_-vTh-sNWARIQyh81rELW</recordid><startdate>200606</startdate><enddate>200606</enddate><creator>Nanlei Larry Wang</creator><creator>Wenlong Ma</creator><creator>Sarah Xu</creator><creator>Camargo, E.</creator><creator>Xiaopeng Sun</creator><creator>Hu, P.</creator><creator>Zhuang Tang</creator><creator>Hin-Fai Frank Chau</creator><creator>Amelia Chen</creator><creator>Lee, C.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200606</creationdate><title>28V High-Linearity and Rugged InGaP/GaAs Power HBT</title><author>Nanlei Larry Wang ; Wenlong Ma ; Sarah Xu ; Camargo, E. ; Xiaopeng Sun ; Hu, P. ; Zhuang Tang ; Hin-Fai Frank Chau ; Amelia Chen ; Lee, C.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-25a85458bf713d36250ba31cdc1bb37d479412a8be1f90f2b35dd8c0dad9c7fd3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Circuits</topic><topic>Current density</topic><topic>Gain</topic><topic>Gallium arsenide</topic><topic>Heterojunction bipolar transistor</topic><topic>Heterojunction bipolar transistors</topic><topic>interchannel interference</topic><topic>Lifetime estimation</topic><topic>Linearity</topic><topic>Maintenance</topic><topic>Multiaccess communication</topic><topic>power amplifiers</topic><topic>power bipolar amplifiers</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Nanlei Larry Wang</creatorcontrib><creatorcontrib>Wenlong Ma</creatorcontrib><creatorcontrib>Sarah Xu</creatorcontrib><creatorcontrib>Camargo, E.</creatorcontrib><creatorcontrib>Xiaopeng Sun</creatorcontrib><creatorcontrib>Hu, P.</creatorcontrib><creatorcontrib>Zhuang Tang</creatorcontrib><creatorcontrib>Hin-Fai Frank Chau</creatorcontrib><creatorcontrib>Amelia Chen</creatorcontrib><creatorcontrib>Lee, C.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nanlei Larry Wang</au><au>Wenlong Ma</au><au>Sarah Xu</au><au>Camargo, E.</au><au>Xiaopeng Sun</au><au>Hu, P.</au><au>Zhuang Tang</au><au>Hin-Fai Frank Chau</au><au>Amelia Chen</au><au>Lee, C.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>28V High-Linearity and Rugged InGaP/GaAs Power HBT</atitle><btitle>2006 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>2006-06</date><risdate>2006</risdate><spage>881</spage><epage>884</epage><pages>881-884</pages><issn>0149-645X</issn><isbn>9780780395411</isbn><isbn>0780395417</isbn><abstract>This paper reports on the improvement of a previously developed InGaP/GaAs HBT for 24-28V linear power operation. The improvements achieved were: application of dynamic bias circuit which improves the ACLR under WCDMA modulation; modification of device technology improving ruggedness to sustain 10:1 VSWR at 30V collector bias under P 1dB driving conditions and over 6 dB of gain compression; maintenance of lifetime and reliability simultaneously. Building blocks of HBT were strung together for higher power and good scaling of performance was achieved supporting the validity of the layout approach and the thermal design. Devices delivering P 1dB equiv 8W under CW conditions provided ACLR equiv -50 dBc at 8.5 dB back-off and 16% efficiency for WCDMA signal (PARequiv8.7 dB) at 2.14 GHz. Lifetime test over 3000 hours was repeated for 28V bias and 0.05mA/mum 2 current density at 315 degree C junction temperature. Therefore, the InGaP/GaAs HBT technology is mature now for the high linearity power amplification</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2006.249833</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0149-645X |
| ispartof | 2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.881-884 |
| issn | 0149-645X |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuits Current density Gain Gallium arsenide Heterojunction bipolar transistor Heterojunction bipolar transistors interchannel interference Lifetime estimation Linearity Maintenance Multiaccess communication power amplifiers power bipolar amplifiers Temperature |
| title | 28V High-Linearity and Rugged InGaP/GaAs Power HBT |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T11%3A03%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=28V%20High-Linearity%20and%20Rugged%20InGaP/GaAs%20Power%20HBT&rft.btitle=2006%20IEEE%20MTT-S%20International%20Microwave%20Symposium%20Digest&rft.au=Nanlei%20Larry%20Wang&rft.date=2006-06&rft.spage=881&rft.epage=884&rft.pages=881-884&rft.issn=0149-645X&rft.isbn=9780780395411&rft.isbn_list=0780395417&rft_id=info:doi/10.1109/MWSYM.2006.249833&rft_dat=%3Cieee_6IE%3E4015051%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4015051&rfr_iscdi=true |