Advances in silicon carbide (SiC) device processing and substrate fabrication for high power microwave and high temperature electronics

High-power density, temperature tolerant silicon carbide (SiC) electronics offer an exceptional opportunity to increase the performance and lower the cost of many existing and emerging military and commercial products. Surveillance and tactical radar systems, compact electric tank and aircraft engin...

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Bibliographische Detailangaben
Hauptverfasser: Driver, M.C., Hopkins, R.H., Brandt, C.D., Barrett, D.L., Burk, A.A., Clarke, R.C., Eldridge, G.W., Hobgood, H.M., McHugh, J.P., McMullin, P.G., Siergiej, R.R., Sriram, S.
Format: Tagungsbericht
Sprache:eng
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