Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes
In this paper, we investigate temperature dependence of breakdown voltage V/sub br/ from -40 to 110/spl deg/C in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's) with a range of device parameters. The experimental data shows that V/sub br...
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| Veröffentlicht in: | IEEE transactions on electron devices 1995-05, Vol.42 (5), p.810-818 |
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| container_title | IEEE transactions on electron devices |
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| creator | Ma, C.L.F. Deen, M.J. Tarof, L.E. Yu, J.C.H. |
| description | In this paper, we investigate temperature dependence of breakdown voltage V/sub br/ from -40 to 110/spl deg/C in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's) with a range of device parameters. The experimental data shows that V/sub br/ is approximately a linear function of temperature, with a temperature coefficient /spl eta//sub exp/ between 0.13 and 0.16 V//spl deg/C. A physical model is developed and it demonstrates that V/sub br/ indeed varies linearly with temperature with a temperature coefficient /spl eta//sub the/ about 0.155 V//spl deg/C. It also explains successfully the small variation of /spl eta//sub exp/ among the APD's. Good agreement between the physical model predictions and experimental data of published InP-based APD's is also obtained. This good agreement demonstrates that the proposed physical model is appropriate to model the temperature dependent characteristics in any InP-based APD's.< > |
| doi_str_mv | 10.1109/16.381974 |
| format | Article |
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The experimental data shows that V/sub br/ is approximately a linear function of temperature, with a temperature coefficient /spl eta//sub exp/ between 0.13 and 0.16 V//spl deg/C. A physical model is developed and it demonstrates that V/sub br/ indeed varies linearly with temperature with a temperature coefficient /spl eta//sub the/ about 0.155 V//spl deg/C. It also explains successfully the small variation of /spl eta//sub exp/ among the APD's. Good agreement between the physical model predictions and experimental data of published InP-based APD's is also obtained. This good agreement demonstrates that the proposed physical model is appropriate to model the temperature dependent characteristics in any InP-based APD's.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.381974</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Absorption ; Applied sciences ; Avalanche photodiodes ; Breakdown voltage ; Buffer layers ; Dielectric constant ; Doping ; Electronics ; Exact sciences and technology ; Indium gallium arsenide ; Indium phosphide ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Temperature dependence ; Thickness control</subject><ispartof>IEEE transactions on electron devices, 1995-05, Vol.42 (5), p.810-818</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c306t-922ab6af501fc9404ae9cd755fcb158576ad61af279f7a308f290508f5d5549f3</citedby><cites>FETCH-LOGICAL-c306t-922ab6af501fc9404ae9cd755fcb158576ad61af279f7a308f290508f5d5549f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/381974$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27915,27916,54749</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/381974$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3514748$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ma, C.L.F.</creatorcontrib><creatorcontrib>Deen, M.J.</creatorcontrib><creatorcontrib>Tarof, L.E.</creatorcontrib><creatorcontrib>Yu, J.C.H.</creatorcontrib><title>Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this paper, we investigate temperature dependence of breakdown voltage V/sub br/ from -40 to 110/spl deg/C in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's) with a range of device parameters. The experimental data shows that V/sub br/ is approximately a linear function of temperature, with a temperature coefficient /spl eta//sub exp/ between 0.13 and 0.16 V//spl deg/C. A physical model is developed and it demonstrates that V/sub br/ indeed varies linearly with temperature with a temperature coefficient /spl eta//sub the/ about 0.155 V//spl deg/C. It also explains successfully the small variation of /spl eta//sub exp/ among the APD's. Good agreement between the physical model predictions and experimental data of published InP-based APD's is also obtained. This good agreement demonstrates that the proposed physical model is appropriate to model the temperature dependent characteristics in any InP-based APD's.< ></description><subject>Absorption</subject><subject>Applied sciences</subject><subject>Avalanche photodiodes</subject><subject>Breakdown voltage</subject><subject>Buffer layers</subject><subject>Dielectric constant</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature dependence</subject><subject>Thickness control</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNpFkE9r3DAQxUVpoNukh1570qEUCutEsv5ZxxDSZCHQHJKzmZVGu2q9kit5U_oR-q3r4JCeHsP85jHvEfKRs3POmb3g-lx03Br5hqy4UqaxWuq3ZMUY7xorOvGOvK_1xzxqKdsV-fuAhxELTMeC1OOIyWNySHOg24Lw0-ffiT7lYYIdVhoTrTjCjCOFbc1lnGJOa7or4GParanbQ9nhmkLy9HAcpjgO0cEzRDfp_mKTbuCyUniCAZLbIx33eco-Zo_1jJwEGCp-eNFT8vjt-uHqtrn7frO5urxrnGB6amzbwlZDUIwHZyWTgNZ5o1RwW646ZTR4zSG0xgYDgnWhtUzNorxS0gZxSr4svmPJv45Yp_4Qq8Nh_gjzsfZtZ7gyQszg1wV0JddaMPRjiQcof3rO-ueye677peyZ_fxiCtXBEMocL9bXA6G4NLKbsU8LFhHx_3bx-AcqDYjA</recordid><startdate>19950501</startdate><enddate>19950501</enddate><creator>Ma, C.L.F.</creator><creator>Deen, M.J.</creator><creator>Tarof, L.E.</creator><creator>Yu, J.C.H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19950501</creationdate><title>Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes</title><author>Ma, C.L.F. ; Deen, M.J. ; Tarof, L.E. ; Yu, J.C.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-922ab6af501fc9404ae9cd755fcb158576ad61af279f7a308f290508f5d5549f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Absorption</topic><topic>Applied sciences</topic><topic>Avalanche photodiodes</topic><topic>Breakdown voltage</topic><topic>Buffer layers</topic><topic>Dielectric constant</topic><topic>Doping</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature dependence</topic><topic>Thickness control</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ma, C.L.F.</creatorcontrib><creatorcontrib>Deen, M.J.</creatorcontrib><creatorcontrib>Tarof, L.E.</creatorcontrib><creatorcontrib>Yu, J.C.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ma, C.L.F.</au><au>Deen, M.J.</au><au>Tarof, L.E.</au><au>Yu, J.C.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1995-05-01</date><risdate>1995</risdate><volume>42</volume><issue>5</issue><spage>810</spage><epage>818</epage><pages>810-818</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this paper, we investigate temperature dependence of breakdown voltage V/sub br/ from -40 to 110/spl deg/C in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's) with a range of device parameters. The experimental data shows that V/sub br/ is approximately a linear function of temperature, with a temperature coefficient /spl eta//sub exp/ between 0.13 and 0.16 V//spl deg/C. A physical model is developed and it demonstrates that V/sub br/ indeed varies linearly with temperature with a temperature coefficient /spl eta//sub the/ about 0.155 V//spl deg/C. It also explains successfully the small variation of /spl eta//sub exp/ among the APD's. Good agreement between the physical model predictions and experimental data of published InP-based APD's is also obtained. This good agreement demonstrates that the proposed physical model is appropriate to model the temperature dependent characteristics in any InP-based APD's.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.381974</doi><tpages>9</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1995-05, Vol.42 (5), p.810-818 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Xplore |
| subjects | Absorption Applied sciences Avalanche photodiodes Breakdown voltage Buffer layers Dielectric constant Doping Electronics Exact sciences and technology Indium gallium arsenide Indium phosphide Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature dependence Thickness control |
| title | Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes |
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