Magneto-transport properties of strained GaInAs/InP single quantum wells
Using magnetic and magneto-optical methods, the authors were able to determine various material parameters of the strained system GaInAs in InP. To investigate some of these parameters, they have grown various modulation doped single quantum wells. The quantum well composition of Ga/sub x/In/sub 1-x...
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| creator | Harle, V. Bolay, H. Hugo, J. Scholz, F. Meyer, B.K. Drechsler, M. Wetzel, C. Kowalski, B. Omling, P. |
| description | Using magnetic and magneto-optical methods, the authors were able to determine various material parameters of the strained system GaInAs in InP. To investigate some of these parameters, they have grown various modulation doped single quantum wells. The quantum well composition of Ga/sub x/In/sub 1-x/As was varied from x = 0.4 to 0.55 and the well width from 1 to 15 nm. The effective in-plane electron masses were measured for the various compositions using cyclotron resonance and temperature dependent Shubnikov-de Haas measurements (SdH). The dependency of the carrier mobility of n- and p-modulation doped samples on the well width and the composition were investigated by the use of SdH and Hall measurements at 4 K and 77 K. Optical detected magnetic resonance investigations were carried out to determine the hole/electron g-factors.< > |
| doi_str_mv | 10.1109/ICIPRM.1993.380677 |
| format | Conference Proceeding |
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To investigate some of these parameters, they have grown various modulation doped single quantum wells. The quantum well composition of Ga/sub x/In/sub 1-x/As was varied from x = 0.4 to 0.55 and the well width from 1 to 15 nm. The effective in-plane electron masses were measured for the various compositions using cyclotron resonance and temperature dependent Shubnikov-de Haas measurements (SdH). The dependency of the carrier mobility of n- and p-modulation doped samples on the well width and the composition were investigated by the use of SdH and Hall measurements at 4 K and 77 K. Optical detected magnetic resonance investigations were carried out to determine the hole/electron g-factors.< ></description><identifier>ISBN: 9780780309937</identifier><identifier>ISBN: 0780309936</identifier><identifier>DOI: 10.1109/ICIPRM.1993.380677</identifier><language>eng</language><publisher>IEEE</publisher><subject>Cyclotrons ; Electron optics ; Epitaxial layers ; Indium phosphide ; Magnetic materials ; Magnetic properties ; Magnetic resonance ; Magnetooptic effects ; Optical detectors ; Temperature dependence</subject><ispartof>1993 (5th) International Conference on Indium Phosphide and Related Materials, 1993, p.191-194</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/380677$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/380677$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Harle, V.</creatorcontrib><creatorcontrib>Bolay, H.</creatorcontrib><creatorcontrib>Hugo, J.</creatorcontrib><creatorcontrib>Scholz, F.</creatorcontrib><creatorcontrib>Meyer, B.K.</creatorcontrib><creatorcontrib>Drechsler, M.</creatorcontrib><creatorcontrib>Wetzel, C.</creatorcontrib><creatorcontrib>Kowalski, B.</creatorcontrib><creatorcontrib>Omling, P.</creatorcontrib><title>Magneto-transport properties of strained GaInAs/InP single quantum wells</title><title>1993 (5th) International Conference on Indium Phosphide and Related Materials</title><addtitle>ICIPRM</addtitle><description>Using magnetic and magneto-optical methods, the authors were able to determine various material parameters of the strained system GaInAs in InP. 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Optical detected magnetic resonance investigations were carried out to determine the hole/electron g-factors.< ></description><subject>Cyclotrons</subject><subject>Electron optics</subject><subject>Epitaxial layers</subject><subject>Indium phosphide</subject><subject>Magnetic materials</subject><subject>Magnetic properties</subject><subject>Magnetic resonance</subject><subject>Magnetooptic effects</subject><subject>Optical detectors</subject><subject>Temperature dependence</subject><isbn>9780780309937</isbn><isbn>0780309936</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1993</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jtEKgjAYhQcRFOULeLUXUDdWzV2GVHohSHQvg35lodP2T6K3T6jrDgcOfN_NISTkLOacqaTIiupaxlwpEYuUHaRckEDJlM0VbKZyRQLEB5uz23PB0jXJS91a8EPknbY4Ds7T0Q0jOG8A6dBQnIWxcKcXXdgjJoWtKBrbdkCfk7Z-6ukLug63ZNnoDiH47YaE59MtyyMDAPXoTK_du_7eEn_lB1nKPNE</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>Harle, V.</creator><creator>Bolay, H.</creator><creator>Hugo, J.</creator><creator>Scholz, F.</creator><creator>Meyer, B.K.</creator><creator>Drechsler, M.</creator><creator>Wetzel, C.</creator><creator>Kowalski, B.</creator><creator>Omling, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1993</creationdate><title>Magneto-transport properties of strained GaInAs/InP single quantum wells</title><author>Harle, V. ; Bolay, H. ; Hugo, J. ; Scholz, F. ; Meyer, B.K. ; Drechsler, M. ; Wetzel, C. ; Kowalski, B. ; Omling, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_3806773</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Cyclotrons</topic><topic>Electron optics</topic><topic>Epitaxial layers</topic><topic>Indium phosphide</topic><topic>Magnetic materials</topic><topic>Magnetic properties</topic><topic>Magnetic resonance</topic><topic>Magnetooptic effects</topic><topic>Optical detectors</topic><topic>Temperature dependence</topic><toplevel>online_resources</toplevel><creatorcontrib>Harle, V.</creatorcontrib><creatorcontrib>Bolay, H.</creatorcontrib><creatorcontrib>Hugo, J.</creatorcontrib><creatorcontrib>Scholz, F.</creatorcontrib><creatorcontrib>Meyer, B.K.</creatorcontrib><creatorcontrib>Drechsler, M.</creatorcontrib><creatorcontrib>Wetzel, C.</creatorcontrib><creatorcontrib>Kowalski, B.</creatorcontrib><creatorcontrib>Omling, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Harle, V.</au><au>Bolay, H.</au><au>Hugo, J.</au><au>Scholz, F.</au><au>Meyer, B.K.</au><au>Drechsler, M.</au><au>Wetzel, C.</au><au>Kowalski, B.</au><au>Omling, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Magneto-transport properties of strained GaInAs/InP single quantum wells</atitle><btitle>1993 (5th) International Conference on Indium Phosphide and Related Materials</btitle><stitle>ICIPRM</stitle><date>1993</date><risdate>1993</risdate><spage>191</spage><epage>194</epage><pages>191-194</pages><isbn>9780780309937</isbn><isbn>0780309936</isbn><abstract>Using magnetic and magneto-optical methods, the authors were able to determine various material parameters of the strained system GaInAs in InP. To investigate some of these parameters, they have grown various modulation doped single quantum wells. The quantum well composition of Ga/sub x/In/sub 1-x/As was varied from x = 0.4 to 0.55 and the well width from 1 to 15 nm. The effective in-plane electron masses were measured for the various compositions using cyclotron resonance and temperature dependent Shubnikov-de Haas measurements (SdH). The dependency of the carrier mobility of n- and p-modulation doped samples on the well width and the composition were investigated by the use of SdH and Hall measurements at 4 K and 77 K. Optical detected magnetic resonance investigations were carried out to determine the hole/electron g-factors.< ></abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.1993.380677</doi></addata></record> |
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| identifier | ISBN: 9780780309937 |
| ispartof | 1993 (5th) International Conference on Indium Phosphide and Related Materials, 1993, p.191-194 |
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| language | eng |
| recordid | cdi_ieee_primary_380677 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Cyclotrons Electron optics Epitaxial layers Indium phosphide Magnetic materials Magnetic properties Magnetic resonance Magnetooptic effects Optical detectors Temperature dependence |
| title | Magneto-transport properties of strained GaInAs/InP single quantum wells |
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