Microanalysis of inhomogeneous reaction and Schottky-barrier change of Al/n-InP contacts upon rapid thermal annealing

Although metal contacts to oxidized n-InP show relatively high Schottky-barrier height, they will not be stable upon thermal annealing since the interfacial reaction might dissociate the oxides. The authors present the change in electrical properties of Al/n-InP contacts upon the rapid thermal annea...

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Bibliographische Detailangaben

Hauptverfasser:	Lin, T.C., Kaibe, H.T., Kaneshiro, C., Miyazaki, S., Okumura, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Artificial intelligence Contacts Indium phosphide Microscopy Optoelectronic devices Rapid thermal annealing Substrates Temperature distribution Thermal engineering X-ray diffraction
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