Effects of carrier spatial hole burning and structure-dependent nonlinear gain in frequency modulation characteristics of GaAs quantum well external cavity lasers

Effects of carrier spatial hole burning and structure-dependent nonlinear gain in frequency modulation characteristics of GaAs quantum well external cavity lasers

We derive, we believe for the first time, an expression for the chirp-to-power ratio (CPR), i.e. the ratio of the frequency modulation to the intensity modulation for quantum well lasers which includes effects the carrier transport from separate-confinement-heterostructure (SCH) layers to the quantu...

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Hauptverfasser: Kao-Yang Huang, Carter, G.M.
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Sprache:eng
Schlagworte:
Amplitude modulation
Chirp
Diode lasers
Frequency modulation
Gallium arsenide
Intensity modulation
Laser modes
Laser theory
Phase modulation
Quantum well lasers
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Carter, G.M.
description We derive, we believe for the first time, an expression for the chirp-to-power ratio (CPR), i.e. the ratio of the frequency modulation to the intensity modulation for quantum well lasers which includes effects the carrier transport from separate-confinement-heterostructure (SCH) layers to the quantum wells, spatial hole burning in the lateral dimension of the quantum wells, and intrinsic material gain compression. The model includes the photon lifetime and percentage bias current above threshold as scaling parameters. We compare the model with data obtained from a quantum well GaAs laser and a channel-substrate planar (CSP) structure laser both in external cavities.< >
doi_str_mv 10.1109/LEOS.1993.379322
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The model includes the photon lifetime and percentage bias current above threshold as scaling parameters. 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We compare the model with data obtained from a quantum well GaAs laser and a channel-substrate planar (CSP) structure laser both in external cavities.&lt; &gt;</description><subject>Amplitude modulation</subject><subject>Chirp</subject><subject>Diode lasers</subject><subject>Frequency modulation</subject><subject>Gallium arsenide</subject><subject>Intensity modulation</subject><subject>Laser modes</subject><subject>Laser theory</subject><subject>Phase modulation</subject><subject>Quantum well lasers</subject><isbn>0780312635</isbn><isbn>9780780312630</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1993</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMtqwzAURAWl0Ff2pav7A071sC17GUKaFgJZNPtwLV0nKo6cSHLb_E6_tKbpMDCb4QwMY4-CT4Xg9fNqsX6firpWU6VrJeUVu-O64krIUhU3bBLjBx-VF7wW1S37WbQtmRShb8FgCI4CxCMmhx3s-46gGYJ3fgfoLcQUBpOGQJmlI3lLPoHvfec8YYAdOg-j20Cngbw5w6G3Qzeyeg9mjwFNouBicuZvbomzCKcBfRoO8EVdB_Q9Fvy4bPDTpTN0GCnEB3bdYhdp8p_3bPOy2Mxfs9V6-TafrTJX6ZTporYiL8tGClFiZWXekNGVMkXJq1xaIYucmkJgw0WrG9moVqHQqjZlYazS6p49XbCOiLbH4A4YztvLieoXbU1sSg</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>Kao-Yang Huang</creator><creator>Carter, G.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1993</creationdate><title>Effects of carrier spatial hole burning and structure-dependent nonlinear gain in frequency modulation characteristics of GaAs quantum well external cavity lasers</title><author>Kao-Yang Huang ; Carter, G.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-759d1466b2116a8d24bec783c560842d1254eb51ab01f7b2b3f3a1739c65cd373</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Amplitude modulation</topic><topic>Chirp</topic><topic>Diode lasers</topic><topic>Frequency modulation</topic><topic>Gallium arsenide</topic><topic>Intensity modulation</topic><topic>Laser modes</topic><topic>Laser theory</topic><topic>Phase modulation</topic><topic>Quantum well lasers</topic><toplevel>online_resources</toplevel><creatorcontrib>Kao-Yang Huang</creatorcontrib><creatorcontrib>Carter, G.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kao-Yang Huang</au><au>Carter, G.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Effects of carrier spatial hole burning and structure-dependent nonlinear gain in frequency modulation characteristics of GaAs quantum well external cavity lasers</atitle><btitle>Proceedings of LEOS '93</btitle><stitle>LEOS</stitle><date>1993</date><risdate>1993</risdate><spage>582</spage><epage>583</epage><pages>582-583</pages><isbn>0780312635</isbn><isbn>9780780312630</isbn><abstract>We derive, we believe for the first time, an expression for the chirp-to-power ratio (CPR), i.e. the ratio of the frequency modulation to the intensity modulation for quantum well lasers which includes effects the carrier transport from separate-confinement-heterostructure (SCH) layers to the quantum wells, spatial hole burning in the lateral dimension of the quantum wells, and intrinsic material gain compression. 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subjects Amplitude modulation
Chirp
Diode lasers
Frequency modulation
Gallium arsenide
Intensity modulation
Laser modes
Laser theory
Phase modulation
Quantum well lasers
title Effects of carrier spatial hole burning and structure-dependent nonlinear gain in frequency modulation characteristics of GaAs quantum well external cavity lasers
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