Waveguide materials by oxygen ion implantation into GaAs

Ion implantation has some desirable features for changing material properties such as : reproducibility, uniformity, speed of the doping process, a well controlled dose rate and dopant profile, less stringent requirements on dopant source purity, the simplicity of masked implantation, and the avoida...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chan, K.T., Hui, Y.W., Han, D.J., Li, G.H., Hitzman, C.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Gallium arsenide Implants Ion implantation Optical surface waves Oxygen Refractive index Rough surfaces Surface roughness Wavelength measurement
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