Narrow farfield, low threshold tapered lasers
In this paper we propose a new technique based on tapering of the waveguide layer along the cavity by Shadow Masked Growth (SMG), which yields low threshold lasers with a narrow farfield. Due to the diffusion limited MOVPE growth process the growth velocity V/sub gr/ on the substrate depends on the...
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| creator | Vermeire, G. Vermaerke, F. Van Daele, P. Demeester, P. |
| description | In this paper we propose a new technique based on tapering of the waveguide layer along the cavity by Shadow Masked Growth (SMG), which yields low threshold lasers with a narrow farfield. Due to the diffusion limited MOVPE growth process the growth velocity V/sub gr/ on the substrate depends on the width of the channel W and the thickness H of the spacerlayer. The velocity will decrease with decreasing width W and increasing thickness H and vice versa. This makes it possible to change the thickness of the layer at predefined places on the substrate by varying the width of the channel. The prepatterned substrates are defined by lithography and wet etching.< > |
| doi_str_mv | 10.1109/LEOS.1993.379250 |
| format | Conference Proceeding |
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The prepatterned substrates are defined by lithography and wet etching.< ></description><identifier>ISBN: 0780312635</identifier><identifier>ISBN: 9780780312630</identifier><identifier>DOI: 10.1109/LEOS.1993.379250</identifier><language>eng</language><publisher>IEEE</publisher><subject>Fiber lasers ; Laboratories ; Laser modes ; Optical device fabrication ; Optical waveguides ; Semiconductor lasers ; Substrates ; Threshold current ; Waveguide lasers ; Wet etching</subject><ispartof>Proceedings of LEOS '93, 1993, p.443-444</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/379250$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/379250$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Vermeire, G.</creatorcontrib><creatorcontrib>Vermaerke, F.</creatorcontrib><creatorcontrib>Van Daele, P.</creatorcontrib><creatorcontrib>Demeester, P.</creatorcontrib><title>Narrow farfield, low threshold tapered lasers</title><title>Proceedings of LEOS '93</title><addtitle>LEOS</addtitle><description>In this paper we propose a new technique based on tapering of the waveguide layer along the cavity by Shadow Masked Growth (SMG), which yields low threshold lasers with a narrow farfield. Due to the diffusion limited MOVPE growth process the growth velocity V/sub gr/ on the substrate depends on the width of the channel W and the thickness H of the spacerlayer. The velocity will decrease with decreasing width W and increasing thickness H and vice versa. This makes it possible to change the thickness of the layer at predefined places on the substrate by varying the width of the channel. The prepatterned substrates are defined by lithography and wet etching.< ></description><subject>Fiber lasers</subject><subject>Laboratories</subject><subject>Laser modes</subject><subject>Optical device fabrication</subject><subject>Optical waveguides</subject><subject>Semiconductor lasers</subject><subject>Substrates</subject><subject>Threshold current</subject><subject>Waveguide lasers</subject><subject>Wet etching</subject><isbn>0780312635</isbn><isbn>9780780312630</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1993</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8FKAzEURQMiVGv34mo-wBmTvLwmWUqpVhjsot2Xl8kLHYm0JAPi31uod3M4mwNXiEclO6Wkf-nX212nvIcOrNcob8S9tE6C0kvAmVjU-iUvMyi9cnei_aRSTj9NopJGzvG5yRebjoXr8ZRjM9GZC8cmU-VSH8Rtolx58c-52L-t96tN22_fP1avfTs6O7XKh8iUEjNabRz6FCLqYFw0kcgzKhwGA3pAYASDiXQEw3ZpgwmGPMzF0zU7MvPhXMZvKr-H6x_4A3nwQMw</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>Vermeire, G.</creator><creator>Vermaerke, F.</creator><creator>Van Daele, P.</creator><creator>Demeester, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1993</creationdate><title>Narrow farfield, low threshold tapered lasers</title><author>Vermeire, G. ; Vermaerke, F. ; Van Daele, P. ; Demeester, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-19bdeaffee5724859fbd52b48d4daa9e515cc432c53e5345fa2d34e767b4b4a93</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Fiber lasers</topic><topic>Laboratories</topic><topic>Laser modes</topic><topic>Optical device fabrication</topic><topic>Optical waveguides</topic><topic>Semiconductor lasers</topic><topic>Substrates</topic><topic>Threshold current</topic><topic>Waveguide lasers</topic><topic>Wet etching</topic><toplevel>online_resources</toplevel><creatorcontrib>Vermeire, G.</creatorcontrib><creatorcontrib>Vermaerke, F.</creatorcontrib><creatorcontrib>Van Daele, P.</creatorcontrib><creatorcontrib>Demeester, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vermeire, G.</au><au>Vermaerke, F.</au><au>Van Daele, P.</au><au>Demeester, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Narrow farfield, low threshold tapered lasers</atitle><btitle>Proceedings of LEOS '93</btitle><stitle>LEOS</stitle><date>1993</date><risdate>1993</risdate><spage>443</spage><epage>444</epage><pages>443-444</pages><isbn>0780312635</isbn><isbn>9780780312630</isbn><abstract>In this paper we propose a new technique based on tapering of the waveguide layer along the cavity by Shadow Masked Growth (SMG), which yields low threshold lasers with a narrow farfield. Due to the diffusion limited MOVPE growth process the growth velocity V/sub gr/ on the substrate depends on the width of the channel W and the thickness H of the spacerlayer. The velocity will decrease with decreasing width W and increasing thickness H and vice versa. This makes it possible to change the thickness of the layer at predefined places on the substrate by varying the width of the channel. The prepatterned substrates are defined by lithography and wet etching.< ></abstract><pub>IEEE</pub><doi>10.1109/LEOS.1993.379250</doi><tpages>2</tpages></addata></record> |
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| identifier | ISBN: 0780312635 |
| ispartof | Proceedings of LEOS '93, 1993, p.443-444 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Fiber lasers Laboratories Laser modes Optical device fabrication Optical waveguides Semiconductor lasers Substrates Threshold current Waveguide lasers Wet etching |
| title | Narrow farfield, low threshold tapered lasers |
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