Microwave characterization of sub-micron n- and p-channel MOSFETs fabricated with thin film Silicon-on-Sapphire

Microwave characteristics are reported for n- and p- MOS transistors fabricated with thin-film Silicon-on-Sapphire technology. The gates were defined with I-line optical lithography, and ranged down to 0.5 /spl mu/m (drawn dimension). The f/sub t/ values of the transistors reach 22 GHz for the n-cha...

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Bibliographische Detailangaben

Hauptverfasser:	Chang, C.E., Asbeck, P.M., de la Houssaye, P.R., Imthurn, G., Garcia, G.A., Lagnado, I.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	III-V semiconductor materials Lithography Microwave circuits Microwave devices Microwave FETs Microwave technology Microwave transistors MOSFETs Semiconductor thin films Thin film transistors
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