Millimeter-wave high power amplifiers using pseudomorphic HEMTs
Millimeter wave high power amplifier modules operating at V-band have been developed utilizing monolithic amplifiers as building blocks. The two stage amplifiers used in this module provide better that 370 mW output power with compressed gain of 7 dB and greater that 11% power-added-efficiency over...
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| creator | Sharma, A.K. Onak, G. Yamauchi, D. Stones, D.I. Goel, J. Lai, R. Tan, K.L. |
| description | Millimeter wave high power amplifier modules operating at V-band have been developed utilizing monolithic amplifiers as building blocks. The two stage amplifiers used in this module provide better that 370 mW output power with compressed gain of 7 dB and greater that 11% power-added-efficiency over the frequency range of 59.5 to 63.5 GHz. These high yielding amplifier utilize 0.15 /spl mu/m passivated T-gate pseudomorphic HEMT fabrication technology. With low loss planar combiners, these modules produced an output power of 740 mW with a power gain of 11.68 dB. These state-of-the-art results represent the highest output power and power gain reported using monolithic amplifiers as building blocks.< > |
| doi_str_mv | 10.1109/MWSYM.1994.335232 |
| format | Conference Proceeding |
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The two stage amplifiers used in this module provide better that 370 mW output power with compressed gain of 7 dB and greater that 11% power-added-efficiency over the frequency range of 59.5 to 63.5 GHz. These high yielding amplifier utilize 0.15 /spl mu/m passivated T-gate pseudomorphic HEMT fabrication technology. With low loss planar combiners, these modules produced an output power of 740 mW with a power gain of 11.68 dB. These state-of-the-art results represent the highest output power and power gain reported using monolithic amplifiers as building blocks.< ></description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 0780317785</identifier><identifier>ISBN: 9780780317789</identifier><identifier>EISSN: 2576-7216</identifier><identifier>DOI: 10.1109/MWSYM.1994.335232</identifier><language>eng</language><publisher>IEEE</publisher><subject>Fabrication ; Frequency ; Gain ; High power amplifiers ; Millimeter wave technology ; PHEMTs ; Power amplifiers ; Power generation</subject><ispartof>1994 IEEE MTT-S International Microwave Symposium Digest (Cat. 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These state-of-the-art results represent the highest output power and power gain reported using monolithic amplifiers as building blocks.< ></description><subject>Fabrication</subject><subject>Frequency</subject><subject>Gain</subject><subject>High power amplifiers</subject><subject>Millimeter wave technology</subject><subject>PHEMTs</subject><subject>Power amplifiers</subject><subject>Power generation</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>0780317785</isbn><isbn>9780780317789</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1994</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj11LwzAYhYMf4Db9AXqVP5D6Jmm-rkTG5oQVL5yoVyNtkzXS2pJsDv-9hXl1Dhx4eA5CtxQySsHcF--vn0VGjckzzgXj7AxNmFCSKEblOZqC0sCpUlpcoAnQ3BCZi48rNE3pCwCEpnKCHorQtqFzexfJ0f443IRdg4f-6CK23dAGH1xM-JDC9w4PyR3qvuvj0IQKrxbFJl2jS2_b5G7-c4belovNfEXWL0_P88c1CVSxPWGlHXWM9pXJOWgrtPJKeFGDzJkcPYFWHoy2tamsHCfJrCk5k9TxshzbDN2duME5tx1i6Gz83Z5-8z8SH0pO</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>Sharma, A.K.</creator><creator>Onak, G.</creator><creator>Yamauchi, D.</creator><creator>Stones, D.I.</creator><creator>Goel, J.</creator><creator>Lai, R.</creator><creator>Tan, K.L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1994</creationdate><title>Millimeter-wave high power amplifiers using pseudomorphic HEMTs</title><author>Sharma, A.K. ; Onak, G. ; Yamauchi, D. ; Stones, D.I. ; Goel, J. ; Lai, R. ; Tan, K.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-2ba07898fc94308a587f75f5d0642680301cf098ad9ca6f7562a9b3261e3bb9b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Fabrication</topic><topic>Frequency</topic><topic>Gain</topic><topic>High power amplifiers</topic><topic>Millimeter wave technology</topic><topic>PHEMTs</topic><topic>Power amplifiers</topic><topic>Power generation</topic><toplevel>online_resources</toplevel><creatorcontrib>Sharma, A.K.</creatorcontrib><creatorcontrib>Onak, G.</creatorcontrib><creatorcontrib>Yamauchi, D.</creatorcontrib><creatorcontrib>Stones, D.I.</creatorcontrib><creatorcontrib>Goel, J.</creatorcontrib><creatorcontrib>Lai, R.</creatorcontrib><creatorcontrib>Tan, K.L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sharma, A.K.</au><au>Onak, G.</au><au>Yamauchi, D.</au><au>Stones, D.I.</au><au>Goel, J.</au><au>Lai, R.</au><au>Tan, K.L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Millimeter-wave high power amplifiers using pseudomorphic HEMTs</atitle><btitle>1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4)</btitle><stitle>MWSYM</stitle><date>1994</date><risdate>1994</risdate><spage>813</spage><epage>816 vol.2</epage><pages>813-816 vol.2</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>0780317785</isbn><isbn>9780780317789</isbn><abstract>Millimeter wave high power amplifier modules operating at V-band have been developed utilizing monolithic amplifiers as building blocks. The two stage amplifiers used in this module provide better that 370 mW output power with compressed gain of 7 dB and greater that 11% power-added-efficiency over the frequency range of 59.5 to 63.5 GHz. These high yielding amplifier utilize 0.15 /spl mu/m passivated T-gate pseudomorphic HEMT fabrication technology. With low loss planar combiners, these modules produced an output power of 740 mW with a power gain of 11.68 dB. These state-of-the-art results represent the highest output power and power gain reported using monolithic amplifiers as building blocks.< ></abstract><pub>IEEE</pub><doi>10.1109/MWSYM.1994.335232</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0149-645X |
| ispartof | 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4), 1994, p.813-816 vol.2 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_335232 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Fabrication Frequency Gain High power amplifiers Millimeter wave technology PHEMTs Power amplifiers Power generation |
| title | Millimeter-wave high power amplifiers using pseudomorphic HEMTs |
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