High gain monolithic p-HEMT W-band four-stage low noise amplifiers
Two monolithic W-band four-stage LNA's based on 0.1 /spl mu/m AlGaAs-InGaAs-GaAs p-HEMT technology were developed. One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gain of 31.7 dB with a noise figure of 5.9 dB at...
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| creator | Tu, D.-W. Berk, W.P. Brown, S.E. Byer, N.E. Duncan, S.W. Eskandarian, A. Fischer, E. Gill, D.M. Golja, B. Kane, B.C. Svensson, S.P. Weinreb, S. |
| description | Two monolithic W-band four-stage LNA's based on 0.1 /spl mu/m AlGaAs-InGaAs-GaAs p-HEMT technology were developed. One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gain of 31.7 dB with a noise figure of 5.9 dB at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. The chips features CPW circuit elements and compact size for low-cost production, single-polarity bias requirement, and a minimum of DC bonding pads.< > |
| doi_str_mv | 10.1109/MCS.1994.332149 |
| format | Conference Proceeding |
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One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gain of 31.7 dB with a noise figure of 5.9 dB at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. 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One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gain of 31.7 dB with a noise figure of 5.9 dB at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. The chips features CPW circuit elements and compact size for low-cost production, single-polarity bias requirement, and a minimum of DC bonding pads.< ></description><subject>Coplanar waveguides</subject><subject>Equivalent circuits</subject><subject>Gain</subject><subject>Gallium arsenide</subject><subject>Low-noise amplifiers</subject><subject>Millimeter wave technology</subject><subject>MIM capacitors</subject><subject>Noise figure</subject><subject>PHEMTs</subject><subject>Probes</subject><isbn>9780780314184</isbn><isbn>0780314182</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1994</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jrEKwjAURQMiKNpZcMoPpCYmarNaKl06WXAsUdP2SZqUpCL-vQWdvRw4w1kuQitGY8ao3BTpOWZSipjzLRNygiJ5SOgIZ4IlYoaiEB50nNhRSfdzdMyhaXGjwOLOWWdgaOGGe5JnRYkv5KrsHdfu6UkYVKOxcS9sHQSNVdcbqEH7sETTWpmgo58XaH3KyjQnoLWueg-d8u_qe4j_jR9ykDha</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>Tu, D.-W.</creator><creator>Berk, W.P.</creator><creator>Brown, S.E.</creator><creator>Byer, N.E.</creator><creator>Duncan, S.W.</creator><creator>Eskandarian, A.</creator><creator>Fischer, E.</creator><creator>Gill, D.M.</creator><creator>Golja, B.</creator><creator>Kane, B.C.</creator><creator>Svensson, S.P.</creator><creator>Weinreb, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1994</creationdate><title>High gain monolithic p-HEMT W-band four-stage low noise amplifiers</title><author>Tu, D.-W. ; Berk, W.P. ; Brown, S.E. ; Byer, N.E. ; Duncan, S.W. ; Eskandarian, A. ; Fischer, E. ; Gill, D.M. ; Golja, B. ; Kane, B.C. ; Svensson, S.P. ; Weinreb, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_3321493</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Coplanar waveguides</topic><topic>Equivalent circuits</topic><topic>Gain</topic><topic>Gallium arsenide</topic><topic>Low-noise amplifiers</topic><topic>Millimeter wave technology</topic><topic>MIM capacitors</topic><topic>Noise figure</topic><topic>PHEMTs</topic><topic>Probes</topic><toplevel>online_resources</toplevel><creatorcontrib>Tu, D.-W.</creatorcontrib><creatorcontrib>Berk, W.P.</creatorcontrib><creatorcontrib>Brown, S.E.</creatorcontrib><creatorcontrib>Byer, N.E.</creatorcontrib><creatorcontrib>Duncan, S.W.</creatorcontrib><creatorcontrib>Eskandarian, A.</creatorcontrib><creatorcontrib>Fischer, E.</creatorcontrib><creatorcontrib>Gill, D.M.</creatorcontrib><creatorcontrib>Golja, B.</creatorcontrib><creatorcontrib>Kane, B.C.</creatorcontrib><creatorcontrib>Svensson, S.P.</creatorcontrib><creatorcontrib>Weinreb, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tu, D.-W.</au><au>Berk, W.P.</au><au>Brown, S.E.</au><au>Byer, N.E.</au><au>Duncan, S.W.</au><au>Eskandarian, A.</au><au>Fischer, E.</au><au>Gill, D.M.</au><au>Golja, B.</au><au>Kane, B.C.</au><au>Svensson, S.P.</au><au>Weinreb, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High gain monolithic p-HEMT W-band four-stage low noise amplifiers</atitle><btitle>Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium</btitle><stitle>MCS</stitle><date>1994</date><risdate>1994</risdate><spage>29</spage><epage>32</epage><pages>29-32</pages><isbn>9780780314184</isbn><isbn>0780314182</isbn><abstract>Two monolithic W-band four-stage LNA's based on 0.1 /spl mu/m AlGaAs-InGaAs-GaAs p-HEMT technology were developed. One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gain of 31.7 dB with a noise figure of 5.9 dB at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. The chips features CPW circuit elements and compact size for low-cost production, single-polarity bias requirement, and a minimum of DC bonding pads.< ></abstract><pub>IEEE</pub><doi>10.1109/MCS.1994.332149</doi></addata></record> |
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| identifier | ISBN: 9780780314184 |
| ispartof | Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994, p.29-32 |
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| language | eng |
| recordid | cdi_ieee_primary_332149 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Coplanar waveguides Equivalent circuits Gain Gallium arsenide Low-noise amplifiers Millimeter wave technology MIM capacitors Noise figure PHEMTs Probes |
| title | High gain monolithic p-HEMT W-band four-stage low noise amplifiers |
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