High gain monolithic p-HEMT W-band four-stage low noise amplifiers

High gain monolithic p-HEMT W-band four-stage low noise amplifiers

Two monolithic W-band four-stage LNA's based on 0.1 /spl mu/m AlGaAs-InGaAs-GaAs p-HEMT technology were developed. One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gain of 31.7 dB with a noise figure of 5.9 dB at...

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Bibliographische Detailangaben
Hauptverfasser: Tu, D.-W., Berk, W.P., Brown, S.E., Byer, N.E., Duncan, S.W., Eskandarian, A., Fischer, E., Gill, D.M., Golja, B., Kane, B.C., Svensson, S.P., Weinreb, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Coplanar waveguides
Equivalent circuits
Gain
Gallium arsenide
Low-noise amplifiers
Millimeter wave technology
MIM capacitors
Noise figure
PHEMTs
Probes
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Beschreibung
Zusammenfassung:Two monolithic W-band four-stage LNA's based on 0.1 /spl mu/m AlGaAs-InGaAs-GaAs p-HEMT technology were developed. One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gain of 31.7 dB with a noise figure of 5.9 dB at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. The chips features CPW circuit elements and compact size for low-cost production, single-polarity bias requirement, and a minimum of DC bonding pads.< >
DOI:10.1109/MCS.1994.332149