Low-temperature characterization of buried-channel NMOST

A comprehensive characterization of buried-channel NMOS transistors at low temperatures down to 30 K is reported. The mobilities of both surface (accumulation) and bulk (buried-channel) electrons were determined as a function of surface electric field and gate bias voltage, respectively, at low temp...

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Veröffentlicht in:	IEEE transactions on electron devices 1989-08, Vol.36 (8), p.1440-1447
Hauptverfasser:	Wilcox, R.A., Chang, J., Viswanathan, C.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	360603 - Materials- Properties 426000 - Engineering- Components, Electron Devices & Circuits- (1990-) 640301 - Atomic, Molecular & Chemical Physics- Beams & their Reactions Applied sciences Capacitance-voltage characteristics CARRIER MOBILITY Charge carriers CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DIFFERENTIAL EQUATIONS ELECTRIC FIELDS Electron mobility ELECTRON-HOLE COUPLING Electronics ENGINEERING EQUATIONS Exact sciences and technology Implants IONIZATION LOW TEMPERATURE Low-frequency noise MATERIALS SCIENCE MOBILITY MOS TRANSISTORS MOSFETs NOISE Noise measurement PARTIAL DIFFERENTIAL EQUATIONS POISSON EQUATION SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface charging SURFACE IONIZATION Temperature TRANSISTORS Voltage
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