Study of porous silicon morphologies for electron transport

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphol...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Smith, D.D., Demroff, H.P., Elliott, T.S., Kasprowicz, T.B., Lee, B., Mazumdar, T.K., McIntyre, P.M., Pang, Y., Trost, H.-J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atomic force microscopy Etching Frequency Galvanizing Microwave devices Scanning electron microscopy Silicon Surface morphology Transmission electron microscopy X-ray diffraction
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