Steady state and pulsed bias stress induced degradation in amorphous silicon thin film transistors for active-matrix liquid crystal displays

The threshold voltage instabilities in nitride/oxide dual gate dielectric hydrogenated amorphous silicon (a-Si:H) thin-film transistors are investigated as a function of stress time, stress temperature and stress bias. The obtained results are explained with a multiple trapping model, rather than we...

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Bibliographische Detailangaben

1. Verfasser:	Libsch
Format:	Tagungsbericht
Sprache:	eng ; jpn
Schlagworte:	Amorphous semiconductors Hydrogen Liquid crystal displays Semiconductor device modeling Semiconductor device testing Silicon Thin film transistors
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