Novel metal/2-DEG junction transistors
We present here the research on new metal/2-dimensional electron gas (2-DEG) Schottky contacts. This new high speed contact has unique characteristics which are particularly promising for applications in the fields of millimeter wave electronics and high speed, low power integrated circuits. We desc...
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| creator | Peatman, W.C.B. Park, H. Gelmont, B. Shur, M. Maki, P. Brown, E.R. Rooks, M.J. |
| description | We present here the research on new metal/2-dimensional electron gas (2-DEG) Schottky contacts. This new high speed contact has unique characteristics which are particularly promising for applications in the fields of millimeter wave electronics and high speed, low power integrated circuits. We describe here two new transistors which utilize a side-gate formed by plating gate metal into a trench etched through the plane of the 2-DEG. The first transistor is the Schottky-gated resonant tunneling transistor (SG-RTT) which has demonstrated high transconductance and novel switching properties at room temperature. The second device is a novel 2-dimensional metal-semiconductor field effect transistor (2-D MESFET) which is particularly promising for low power, high speed integrated circuit applications. We also briefly discuss several applications of these new transistors.< > |
| doi_str_mv | 10.1109/CORNEL.1993.303101 |
| format | Conference Proceeding |
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This new high speed contact has unique characteristics which are particularly promising for applications in the fields of millimeter wave electronics and high speed, low power integrated circuits. We describe here two new transistors which utilize a side-gate formed by plating gate metal into a trench etched through the plane of the 2-DEG. The first transistor is the Schottky-gated resonant tunneling transistor (SG-RTT) which has demonstrated high transconductance and novel switching properties at room temperature. The second device is a novel 2-dimensional metal-semiconductor field effect transistor (2-D MESFET) which is particularly promising for low power, high speed integrated circuit applications. We also briefly discuss several applications of these new transistors.< ></description><identifier>ISBN: 0780308948</identifier><identifier>ISBN: 9780780308947</identifier><identifier>DOI: 10.1109/CORNEL.1993.303101</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electrons ; Etching ; FETs ; Millimeter wave integrated circuits ; Millimeter wave transistors ; Power integrated circuits ; Resonant tunneling devices ; Schottky barriers ; Temperature ; Transconductance</subject><ispartof>Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1993, p.314-319</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/303101$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,4036,4037,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/303101$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Peatman, W.C.B.</creatorcontrib><creatorcontrib>Park, H.</creatorcontrib><creatorcontrib>Gelmont, B.</creatorcontrib><creatorcontrib>Shur, M.</creatorcontrib><creatorcontrib>Maki, P.</creatorcontrib><creatorcontrib>Brown, E.R.</creatorcontrib><creatorcontrib>Rooks, M.J.</creatorcontrib><title>Novel metal/2-DEG junction transistors</title><title>Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits</title><addtitle>CORNEL</addtitle><description>We present here the research on new metal/2-dimensional electron gas (2-DEG) Schottky contacts. 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We also briefly discuss several applications of these new transistors.< ></description><subject>Electrons</subject><subject>Etching</subject><subject>FETs</subject><subject>Millimeter wave integrated circuits</subject><subject>Millimeter wave transistors</subject><subject>Power integrated circuits</subject><subject>Resonant tunneling devices</subject><subject>Schottky barriers</subject><subject>Temperature</subject><subject>Transconductance</subject><isbn>0780308948</isbn><isbn>9780780308947</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1993</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj0FLwzAYQAMibM79gZ168tbu-_olTXKUWqdQNpDdR5p-g4yulSYK_nuF-S7v9uAJsUEoEMFu68PHvmkLtJYKAkLAO_EA2gCBsdIsxDrGC_whpZKoluJpP33zkF05uWFb5i_NLrt8jT6FaczS7MYYYprm-Cjuz26IvP73Shxfm2P9lreH3Xv93OYBdZlyX1WSDHBHrtO26owHhaw76NVZc6WAql57ZzSUXhksrSIkUk4a6h0rWonNLRuY-fQ5h6ubf063EfoFI6E8og</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>Peatman, W.C.B.</creator><creator>Park, H.</creator><creator>Gelmont, B.</creator><creator>Shur, M.</creator><creator>Maki, P.</creator><creator>Brown, E.R.</creator><creator>Rooks, M.J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1993</creationdate><title>Novel metal/2-DEG junction transistors</title><author>Peatman, W.C.B. ; Park, H. ; Gelmont, B. ; Shur, M. ; Maki, P. ; Brown, E.R. ; Rooks, M.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-c664380eb3ab796b8c051e7b0d5f7e65036d7ca8702c58129531335a483dae53</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Electrons</topic><topic>Etching</topic><topic>FETs</topic><topic>Millimeter wave integrated circuits</topic><topic>Millimeter wave transistors</topic><topic>Power integrated circuits</topic><topic>Resonant tunneling devices</topic><topic>Schottky barriers</topic><topic>Temperature</topic><topic>Transconductance</topic><toplevel>online_resources</toplevel><creatorcontrib>Peatman, W.C.B.</creatorcontrib><creatorcontrib>Park, H.</creatorcontrib><creatorcontrib>Gelmont, B.</creatorcontrib><creatorcontrib>Shur, M.</creatorcontrib><creatorcontrib>Maki, P.</creatorcontrib><creatorcontrib>Brown, E.R.</creatorcontrib><creatorcontrib>Rooks, M.J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Peatman, W.C.B.</au><au>Park, H.</au><au>Gelmont, B.</au><au>Shur, M.</au><au>Maki, P.</au><au>Brown, E.R.</au><au>Rooks, M.J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Novel metal/2-DEG junction transistors</atitle><btitle>Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits</btitle><stitle>CORNEL</stitle><date>1993</date><risdate>1993</risdate><spage>314</spage><epage>319</epage><pages>314-319</pages><isbn>0780308948</isbn><isbn>9780780308947</isbn><abstract>We present here the research on new metal/2-dimensional electron gas (2-DEG) Schottky contacts. This new high speed contact has unique characteristics which are particularly promising for applications in the fields of millimeter wave electronics and high speed, low power integrated circuits. We describe here two new transistors which utilize a side-gate formed by plating gate metal into a trench etched through the plane of the 2-DEG. The first transistor is the Schottky-gated resonant tunneling transistor (SG-RTT) which has demonstrated high transconductance and novel switching properties at room temperature. The second device is a novel 2-dimensional metal-semiconductor field effect transistor (2-D MESFET) which is particularly promising for low power, high speed integrated circuit applications. We also briefly discuss several applications of these new transistors.< ></abstract><pub>IEEE</pub><doi>10.1109/CORNEL.1993.303101</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 0780308948 |
| ispartof | Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1993, p.314-319 |
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| language | eng |
| recordid | cdi_ieee_primary_303101 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Electrons Etching FETs Millimeter wave integrated circuits Millimeter wave transistors Power integrated circuits Resonant tunneling devices Schottky barriers Temperature Transconductance |
| title | Novel metal/2-DEG junction transistors |
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