A new model for the p-n junction space charge region capacitance

Depletion-approximation-based junction capacitance versus voltage characteristics are adequate for reverse bias but, contrary to experiments and computer simulations, predict an infinite capacitance when the applied voltage equals the built-in potential. A new, physically justified model for the sem...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Van Halen, P., Habib, M.H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance measurement Circuit simulation Cutoff frequency Frequency measurement P-n junctions Photonic band gap Space charge Temperature dependence Thyristors Voltage
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