Contact and via structures with copper interconnects fabricated using dual Damascene technology

A novel submicron process sequence was developed for the fabrication of CoSi/sub 2//n/sup +/-Si, CoSi/sub 2//p/sup +/-Si ohmic contacts and multilevel interconnects with copper as the interconnect/via metal and titanium as the diffusion barrier. SiO/sub 2/ deposited by plasma enhanced chemical vapor...

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Veröffentlicht in:	IEEE electron device letters 1994-08, Vol.15 (8), p.307-309
Hauptverfasser:	Lakshminarayanan, S., Steigerwald, J., Price, D.T., Bourgeois, M., Chow, T.P., Gutmann, R.J., Murarka, S.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chemical processes Chemical vapor deposition Conductivity Copper Dielectrics Electronics Exact sciences and technology Fabrication Microelectronic fabrication (materials and surfaces technology) Ohmic contacts Planarization Plasma chemistry Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Titanium
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