InP-based HEMT's with Al/sub 0.48/In/sub 0.52/As/sub x/P/sub 1-x/ Schottky layers

We report on the DC and RF performance of InP-based HEMT's with Al/sub 0.48/In/sub 0.52/As/sub x/P/sub 1-x/ Schottky layers and GaInAs/InP composite channels. By replacing the Al/sub 0.48/In/sub 0.52/As Schottky layer with Al/sub 0.48/In/sub 0.52/As/sub x/P/sub 1-x/ we have been able to increas...

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Veröffentlicht in:	IEEE electron device letters 1994-05, Vol.15 (5), p.172-174
Hauptverfasser:	Jelloian, L.M., Matloubian, M., Liu, T., Lui, M., Thompson, M.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown voltage Contact resistance Current density Gain HEMTs Indium phosphide Photonic band gap Power generation Radio frequency Sheet materials
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