Passive FET MMIC linearizers for C, X, and Ku-band satellite applications
The design and measured performance of GaAs MMIC (monolithic microwave integrated circuits) linearizers for use with spaceborne traveling wave tube amplifiers (TWTAs) are presented. These linearizers operate at C, X, and Ku-band, and are based on a passive FET design similar to that of MMIC switches...
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creator | Katz, A. Moochalla, S. Klatskin, J. |
description | The design and measured performance of GaAs MMIC (monolithic microwave integrated circuits) linearizers for use with spaceborne traveling wave tube amplifiers (TWTAs) are presented. These linearizers operate at C, X, and Ku-band, and are based on a passive FET design similar to that of MMIC switches and attenuators. MESFET varactors and voltage variable resistors are used as control elements. More than 2.5 GHz of bandwidth is obtained at Ku-band with an improvement of greater than 10 dB in TWTA carrier-to-intermodulation ratio (C/I), and a phase change of less than 5 degrees . Linearizer insertion loss was reduced to below 8 dB at C-band and 10 dB at Ku-band. The MMICs also verified the soundness of the CAD (computer-aided design) modeling techniques used to develop the chips, and the value of the unique MMIC air bridge over metal tuning technique incorporated into the designs.< > |
doi_str_mv | 10.1109/MWSYM.1993.276805 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_276805</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>276805</ieee_id><sourcerecordid>276805</sourcerecordid><originalsourceid>FETCH-LOGICAL-i87t-e3591810b050ee11b3bc80d8955fc21fd647e84811e4a7a46e1db68fb00589223</originalsourceid><addsrcrecordid>eNotkM1Kw0AURgd_wFLzALqaB2jivZP5XUrQWmxQsGBdlUlyAyMxDZko6NNbqR8Hzu4sPsauEDJEcDfl68tbmaFzeSaMtqBO2Ewoo1MjUJ-yxBkLB3IU4OwZmwFKl2qpthcsifEdDpMKHMgZWz37GMMX8fu7DS_LVcG70JMfww-Nkbf7kRcLvl1w3zf88TOt_hz9RF0XJuJ-GLpQ-yns-3jJzlvfRUr-PWebQ7N4SNdPy1Vxu06DNVNKuXJoESpQQIRY5VVtobFOqbYW2DZaGrLSIpL0xktN2FTathWAsk6IfM6uj9lARLthDB9-_N4db8h_ASw4TO8</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Passive FET MMIC linearizers for C, X, and Ku-band satellite applications</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Katz, A. ; Moochalla, S. ; Klatskin, J.</creator><creatorcontrib>Katz, A. ; Moochalla, S. ; Klatskin, J.</creatorcontrib><description>The design and measured performance of GaAs MMIC (monolithic microwave integrated circuits) linearizers for use with spaceborne traveling wave tube amplifiers (TWTAs) are presented. These linearizers operate at C, X, and Ku-band, and are based on a passive FET design similar to that of MMIC switches and attenuators. MESFET varactors and voltage variable resistors are used as control elements. More than 2.5 GHz of bandwidth is obtained at Ku-band with an improvement of greater than 10 dB in TWTA carrier-to-intermodulation ratio (C/I), and a phase change of less than 5 degrees . Linearizer insertion loss was reduced to below 8 dB at C-band and 10 dB at Ku-band. The MMICs also verified the soundness of the CAD (computer-aided design) modeling techniques used to develop the chips, and the value of the unique MMIC air bridge over metal tuning technique incorporated into the designs.< ></description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780780312098</identifier><identifier>ISBN: 0780312090</identifier><identifier>EISSN: 2576-7216</identifier><identifier>DOI: 10.1109/MWSYM.1993.276805</identifier><language>eng</language><publisher>IEEE</publisher><subject>Design automation ; Field effect MMICs ; Gallium arsenide ; Integrated circuit measurements ; Microwave amplifiers ; Microwave FET integrated circuits ; Microwave integrated circuits ; Microwave measurements ; Monolithic integrated circuits ; Satellites</subject><ispartof>1993 IEEE MTT-S International Microwave Symposium Digest, 1993, p.353-356 vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/276805$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/276805$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Katz, A.</creatorcontrib><creatorcontrib>Moochalla, S.</creatorcontrib><creatorcontrib>Klatskin, J.</creatorcontrib><title>Passive FET MMIC linearizers for C, X, and Ku-band satellite applications</title><title>1993 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>The design and measured performance of GaAs MMIC (monolithic microwave integrated circuits) linearizers for use with spaceborne traveling wave tube amplifiers (TWTAs) are presented. These linearizers operate at C, X, and Ku-band, and are based on a passive FET design similar to that of MMIC switches and attenuators. MESFET varactors and voltage variable resistors are used as control elements. More than 2.5 GHz of bandwidth is obtained at Ku-band with an improvement of greater than 10 dB in TWTA carrier-to-intermodulation ratio (C/I), and a phase change of less than 5 degrees . Linearizer insertion loss was reduced to below 8 dB at C-band and 10 dB at Ku-band. The MMICs also verified the soundness of the CAD (computer-aided design) modeling techniques used to develop the chips, and the value of the unique MMIC air bridge over metal tuning technique incorporated into the designs.< ></description><subject>Design automation</subject><subject>Field effect MMICs</subject><subject>Gallium arsenide</subject><subject>Integrated circuit measurements</subject><subject>Microwave amplifiers</subject><subject>Microwave FET integrated circuits</subject><subject>Microwave integrated circuits</subject><subject>Microwave measurements</subject><subject>Monolithic integrated circuits</subject><subject>Satellites</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>9780780312098</isbn><isbn>0780312090</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1993</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkM1Kw0AURgd_wFLzALqaB2jivZP5XUrQWmxQsGBdlUlyAyMxDZko6NNbqR8Hzu4sPsauEDJEcDfl68tbmaFzeSaMtqBO2Ewoo1MjUJ-yxBkLB3IU4OwZmwFKl2qpthcsifEdDpMKHMgZWz37GMMX8fu7DS_LVcG70JMfww-Nkbf7kRcLvl1w3zf88TOt_hz9RF0XJuJ-GLpQ-yns-3jJzlvfRUr-PWebQ7N4SNdPy1Vxu06DNVNKuXJoESpQQIRY5VVtobFOqbYW2DZaGrLSIpL0xktN2FTathWAsk6IfM6uj9lARLthDB9-_N4db8h_ASw4TO8</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>Katz, A.</creator><creator>Moochalla, S.</creator><creator>Klatskin, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1993</creationdate><title>Passive FET MMIC linearizers for C, X, and Ku-band satellite applications</title><author>Katz, A. ; Moochalla, S. ; Klatskin, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-e3591810b050ee11b3bc80d8955fc21fd647e84811e4a7a46e1db68fb00589223</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Design automation</topic><topic>Field effect MMICs</topic><topic>Gallium arsenide</topic><topic>Integrated circuit measurements</topic><topic>Microwave amplifiers</topic><topic>Microwave FET integrated circuits</topic><topic>Microwave integrated circuits</topic><topic>Microwave measurements</topic><topic>Monolithic integrated circuits</topic><topic>Satellites</topic><toplevel>online_resources</toplevel><creatorcontrib>Katz, A.</creatorcontrib><creatorcontrib>Moochalla, S.</creatorcontrib><creatorcontrib>Klatskin, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Katz, A.</au><au>Moochalla, S.</au><au>Klatskin, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Passive FET MMIC linearizers for C, X, and Ku-band satellite applications</atitle><btitle>1993 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>1993</date><risdate>1993</risdate><spage>353</spage><epage>356 vol.1</epage><pages>353-356 vol.1</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>9780780312098</isbn><isbn>0780312090</isbn><abstract>The design and measured performance of GaAs MMIC (monolithic microwave integrated circuits) linearizers for use with spaceborne traveling wave tube amplifiers (TWTAs) are presented. These linearizers operate at C, X, and Ku-band, and are based on a passive FET design similar to that of MMIC switches and attenuators. MESFET varactors and voltage variable resistors are used as control elements. More than 2.5 GHz of bandwidth is obtained at Ku-band with an improvement of greater than 10 dB in TWTA carrier-to-intermodulation ratio (C/I), and a phase change of less than 5 degrees . Linearizer insertion loss was reduced to below 8 dB at C-band and 10 dB at Ku-band. The MMICs also verified the soundness of the CAD (computer-aided design) modeling techniques used to develop the chips, and the value of the unique MMIC air bridge over metal tuning technique incorporated into the designs.< ></abstract><pub>IEEE</pub><doi>10.1109/MWSYM.1993.276805</doi></addata></record> |
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ispartof | 1993 IEEE MTT-S International Microwave Symposium Digest, 1993, p.353-356 vol.1 |
issn | 0149-645X 2576-7216 |
language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Design automation Field effect MMICs Gallium arsenide Integrated circuit measurements Microwave amplifiers Microwave FET integrated circuits Microwave integrated circuits Microwave measurements Monolithic integrated circuits Satellites |
title | Passive FET MMIC linearizers for C, X, and Ku-band satellite applications |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T09%3A11%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Passive%20FET%20MMIC%20linearizers%20for%20C,%20X,%20and%20Ku-band%20satellite%20applications&rft.btitle=1993%20IEEE%20MTT-S%20International%20Microwave%20Symposium%20Digest&rft.au=Katz,%20A.&rft.date=1993&rft.spage=353&rft.epage=356%20vol.1&rft.pages=353-356%20vol.1&rft.issn=0149-645X&rft.eissn=2576-7216&rft.isbn=9780780312098&rft.isbn_list=0780312090&rft_id=info:doi/10.1109/MWSYM.1993.276805&rft_dat=%3Cieee_6IE%3E276805%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=276805&rfr_iscdi=true |