Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs
The cryogenic performance of AlInAs/GaInAs/InP 0.1- mu m high-electron-mobility transistors (HEMTs) is reported. Collapse-free DC operation is observed down to the ambient temperature of 18 K. The application of these devices to Q- and E-band low-noise, cryogenically coolable amplifiers is demonstra...
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| creator | Pospieszalski, M.W. Lakatosh, W.J. Lai, R. Tan, K.L. Streit, D.C. Liu, P.H. Dia, R.M. Velebir, J. |
| description | The cryogenic performance of AlInAs/GaInAs/InP 0.1- mu m high-electron-mobility transistors (HEMTs) is reported. Collapse-free DC operation is observed down to the ambient temperature of 18 K. The application of these devices to Q- and E-band low-noise, cryogenically coolable amplifiers is demonstrated. The measured noise temperature of 15 K (noise figure of 0.2 dB) for a multistage 40-45-GHz amplifier with 33 dB of gain at the ambient of 18 K is in close agreement with the prediction of a simple noise model. A very low power consumption per stage of less than 1 mW is recorded. The noise temperature of the E-band cryogenic amplifier is less than 47 K at 70 GHz, demonstrating that the performance of HEMT receivers is now competitive with that of SIS (superconductor-insulator-superconductor) receivers in the 3-mm wavelength atmospheric window.< > |
| doi_str_mv | 10.1109/MWSYM.1993.276769 |
| format | Conference Proceeding |
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Collapse-free DC operation is observed down to the ambient temperature of 18 K. The application of these devices to Q- and E-band low-noise, cryogenically coolable amplifiers is demonstrated. The measured noise temperature of 15 K (noise figure of 0.2 dB) for a multistage 40-45-GHz amplifier with 33 dB of gain at the ambient of 18 K is in close agreement with the prediction of a simple noise model. A very low power consumption per stage of less than 1 mW is recorded. The noise temperature of the E-band cryogenic amplifier is less than 47 K at 70 GHz, demonstrating that the performance of HEMT receivers is now competitive with that of SIS (superconductor-insulator-superconductor) receivers in the 3-mm wavelength atmospheric window.< ></description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780780312098</identifier><identifier>ISBN: 0780312090</identifier><identifier>EISSN: 2576-7216</identifier><identifier>DOI: 10.1109/MWSYM.1993.276769</identifier><language>eng</language><publisher>IEEE</publisher><subject>Cryogenics ; HEMTs ; Indium phosphide ; Low-noise amplifiers ; Millimeter wave transistors ; MODFETs ; Noise figure ; Operational amplifiers ; Superconducting device noise ; Temperature measurement</subject><ispartof>1993 IEEE MTT-S International Microwave Symposium Digest, 1993, p.515-518 vol.2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/276769$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/276769$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Pospieszalski, M.W.</creatorcontrib><creatorcontrib>Lakatosh, W.J.</creatorcontrib><creatorcontrib>Lai, R.</creatorcontrib><creatorcontrib>Tan, K.L.</creatorcontrib><creatorcontrib>Streit, D.C.</creatorcontrib><creatorcontrib>Liu, P.H.</creatorcontrib><creatorcontrib>Dia, R.M.</creatorcontrib><creatorcontrib>Velebir, J.</creatorcontrib><title>Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs</title><title>1993 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>The cryogenic performance of AlInAs/GaInAs/InP 0.1- mu m high-electron-mobility transistors (HEMTs) is reported. Collapse-free DC operation is observed down to the ambient temperature of 18 K. The application of these devices to Q- and E-band low-noise, cryogenically coolable amplifiers is demonstrated. The measured noise temperature of 15 K (noise figure of 0.2 dB) for a multistage 40-45-GHz amplifier with 33 dB of gain at the ambient of 18 K is in close agreement with the prediction of a simple noise model. A very low power consumption per stage of less than 1 mW is recorded. The noise temperature of the E-band cryogenic amplifier is less than 47 K at 70 GHz, demonstrating that the performance of HEMT receivers is now competitive with that of SIS (superconductor-insulator-superconductor) receivers in the 3-mm wavelength atmospheric window.< ></description><subject>Cryogenics</subject><subject>HEMTs</subject><subject>Indium phosphide</subject><subject>Low-noise amplifiers</subject><subject>Millimeter wave transistors</subject><subject>MODFETs</subject><subject>Noise figure</subject><subject>Operational amplifiers</subject><subject>Superconducting device noise</subject><subject>Temperature measurement</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>9780780312098</isbn><isbn>0780312090</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1993</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMtqwkAYhYdeoGLzAO0qD9CJM5O5ZJYiVgOGCgptV_In-SNTxigZW8nbN9QeDnzwLc7iEPLEWcI5s5PiffNZJNzaNBFGG21vyEgoo6kRXN-SyJqMDU25YDa7IyPGpaVaqo8HEoXwxYZIxSyTI7IunPfugGfs6AV-8CWuuv64x9ZV4H1Pq-PRQ-kxhsPJu8ZhF-Lv4Np9PPV5Ow2TBfwhb9fxcl5swyO5b8AHjP45JpvX-Xa2pKu3RT6brqjLzJk2RnGQqspqkKWRsrLSWm5AYiOAMQQmNQowjU1FNrhScaxr0xgApiqdjsnzddUh4u7UuQN0_e56RvoLralRag</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>Pospieszalski, M.W.</creator><creator>Lakatosh, W.J.</creator><creator>Lai, R.</creator><creator>Tan, K.L.</creator><creator>Streit, D.C.</creator><creator>Liu, P.H.</creator><creator>Dia, R.M.</creator><creator>Velebir, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1993</creationdate><title>Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs</title><author>Pospieszalski, M.W. ; Lakatosh, W.J. ; Lai, R. ; Tan, K.L. ; Streit, D.C. ; Liu, P.H. ; Dia, R.M. ; Velebir, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-f751a45c8da4b744c949917a4ef2a00ea046e2a7f9328ef2b51edd7f7aa05c63</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Cryogenics</topic><topic>HEMTs</topic><topic>Indium phosphide</topic><topic>Low-noise amplifiers</topic><topic>Millimeter wave transistors</topic><topic>MODFETs</topic><topic>Noise figure</topic><topic>Operational amplifiers</topic><topic>Superconducting device noise</topic><topic>Temperature measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Pospieszalski, M.W.</creatorcontrib><creatorcontrib>Lakatosh, W.J.</creatorcontrib><creatorcontrib>Lai, R.</creatorcontrib><creatorcontrib>Tan, K.L.</creatorcontrib><creatorcontrib>Streit, D.C.</creatorcontrib><creatorcontrib>Liu, P.H.</creatorcontrib><creatorcontrib>Dia, R.M.</creatorcontrib><creatorcontrib>Velebir, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pospieszalski, M.W.</au><au>Lakatosh, W.J.</au><au>Lai, R.</au><au>Tan, K.L.</au><au>Streit, D.C.</au><au>Liu, P.H.</au><au>Dia, R.M.</au><au>Velebir, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs</atitle><btitle>1993 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>1993</date><risdate>1993</risdate><spage>515</spage><epage>518 vol.2</epage><pages>515-518 vol.2</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>9780780312098</isbn><isbn>0780312090</isbn><abstract>The cryogenic performance of AlInAs/GaInAs/InP 0.1- mu m high-electron-mobility transistors (HEMTs) is reported. Collapse-free DC operation is observed down to the ambient temperature of 18 K. The application of these devices to Q- and E-band low-noise, cryogenically coolable amplifiers is demonstrated. The measured noise temperature of 15 K (noise figure of 0.2 dB) for a multistage 40-45-GHz amplifier with 33 dB of gain at the ambient of 18 K is in close agreement with the prediction of a simple noise model. A very low power consumption per stage of less than 1 mW is recorded. The noise temperature of the E-band cryogenic amplifier is less than 47 K at 70 GHz, demonstrating that the performance of HEMT receivers is now competitive with that of SIS (superconductor-insulator-superconductor) receivers in the 3-mm wavelength atmospheric window.< ></abstract><pub>IEEE</pub><doi>10.1109/MWSYM.1993.276769</doi></addata></record> |
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| identifier | ISSN: 0149-645X |
| ispartof | 1993 IEEE MTT-S International Microwave Symposium Digest, 1993, p.515-518 vol.2 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_276769 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Cryogenics HEMTs Indium phosphide Low-noise amplifiers Millimeter wave transistors MODFETs Noise figure Operational amplifiers Superconducting device noise Temperature measurement |
| title | Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs |
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