Amorphous silicon position sensitive neutron detector

An investigation of the possibility of using a-Si:H diode coated with an appropriate converter as a position-sensitive neutron detector is presented. Monte Carlo simulation predicts that, using a Gd film approximately 2- mu m thick, coated on a sufficiently thick amorphous silicon n-i-p diode, one c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Mireshghi, A., Cho, G., Drewery, J., Jing, T., Kaplan, S.N., Perez-Mendez, V., Wildermuth, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Amorphous silicon Diodes Event detection Gamma ray detection Gamma ray detectors Gamma rays Neutrons Position sensitive particle detectors Radiation detectors Semiconductor films
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