Amorphous silicon position sensitive neutron detector

An investigation of the possibility of using a-Si:H diode coated with an appropriate converter as a position-sensitive neutron detector is presented. Monte Carlo simulation predicts that, using a Gd film approximately 2- mu m thick, coated on a sufficiently thick amorphous silicon n-i-p diode, one c...

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Hauptverfasser: Mireshghi, A., Cho, G., Drewery, J., Jing, T., Kaplan, S.N., Perez-Mendez, V., Wildermuth, D.
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Cho, G.
Drewery, J.
Jing, T.
Kaplan, S.N.
Perez-Mendez, V.
Wildermuth, D.
description An investigation of the possibility of using a-Si:H diode coated with an appropriate converter as a position-sensitive neutron detector is presented. Monte Carlo simulation predicts that, using a Gd film approximately 2- mu m thick, coated on a sufficiently thick amorphous silicon n-i-p diode, one can achieve a neutron detection efficiency of 25%. The experimental results presented give an average signal size of about 12000 e/sup -/ per neutron interaction, which is well above the noise and is in good agreement with the expected values. One can also fabricate pixel detectors with an element size as small as 300 mu m and still register a count rate of 2200 events/sec in a typical neutron flux of about 10/sup 7/ n/cm/sup 2/ per second. The fact that these detectors are not sensitive to gamma rays and show excellent radiation hardness makes them good candidates for use in applications such as neutron imaging, neutron crystallography, and neutron scattering.< >
doi_str_mv 10.1109/NSSMIC.1991.258922
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Monte Carlo simulation predicts that, using a Gd film approximately 2- mu m thick, coated on a sufficiently thick amorphous silicon n-i-p diode, one can achieve a neutron detection efficiency of 25%. The experimental results presented give an average signal size of about 12000 e/sup -/ per neutron interaction, which is well above the noise and is in good agreement with the expected values. One can also fabricate pixel detectors with an element size as small as 300 mu m and still register a count rate of 2200 events/sec in a typical neutron flux of about 10/sup 7/ n/cm/sup 2/ per second. The fact that these detectors are not sensitive to gamma rays and show excellent radiation hardness makes them good candidates for use in applications such as neutron imaging, neutron crystallography, and neutron scattering.&lt; &gt;</description><identifier>ISBN: 0780305132</identifier><identifier>ISBN: 9780780305137</identifier><identifier>DOI: 10.1109/NSSMIC.1991.258922</identifier><language>eng</language><publisher>IEEE</publisher><subject>Amorphous silicon ; Diodes ; Event detection ; Gamma ray detection ; Gamma ray detectors ; Gamma rays ; Neutrons ; Position sensitive particle detectors ; Radiation detectors ; Semiconductor films</subject><ispartof>Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference, 1991, p.51-54 vol.1</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/258922$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/258922$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mireshghi, A.</creatorcontrib><creatorcontrib>Cho, G.</creatorcontrib><creatorcontrib>Drewery, J.</creatorcontrib><creatorcontrib>Jing, T.</creatorcontrib><creatorcontrib>Kaplan, S.N.</creatorcontrib><creatorcontrib>Perez-Mendez, V.</creatorcontrib><creatorcontrib>Wildermuth, D.</creatorcontrib><title>Amorphous silicon position sensitive neutron detector</title><title>Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference</title><addtitle>NSSMIC</addtitle><description>An investigation of the possibility of using a-Si:H diode coated with an appropriate converter as a position-sensitive neutron detector is presented. 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The fact that these detectors are not sensitive to gamma rays and show excellent radiation hardness makes them good candidates for use in applications such as neutron imaging, neutron crystallography, and neutron scattering.&lt; &gt;</description><subject>Amorphous silicon</subject><subject>Diodes</subject><subject>Event detection</subject><subject>Gamma ray detection</subject><subject>Gamma ray detectors</subject><subject>Gamma rays</subject><subject>Neutrons</subject><subject>Position sensitive particle detectors</subject><subject>Radiation detectors</subject><subject>Semiconductor films</subject><isbn>0780305132</isbn><isbn>9780780305137</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tqwzAURAWl0DbJD2TlH7Crq0ckLYPpI5C2i6TrYElXVCWxjaQU-vd1SGczh1kMM4QsgTYA1Dy-73Zvm7YBY6BhUhvGbsgDVZpyKoGzO7LI-ZtOklJLw-6JXJ-GNH4N51zleIxu6KtxyLHECTL2F_rBqsdzSVPisaArQ5qT29AdMy7-fUY-n5_27Wu9_XjZtOttHUHoUitvFUgTPHrQFK1SgblVJwTnaDsjGA0gUHjFVVArYZgN1slw2a2t8I7PyPLaGxHxMKZ46tLv4XqM_wE8KEVB</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Mireshghi, A.</creator><creator>Cho, G.</creator><creator>Drewery, J.</creator><creator>Jing, T.</creator><creator>Kaplan, S.N.</creator><creator>Perez-Mendez, V.</creator><creator>Wildermuth, D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>Amorphous silicon position sensitive neutron detector</title><author>Mireshghi, A. ; Cho, G. ; Drewery, J. ; Jing, T. ; Kaplan, S.N. ; Perez-Mendez, V. ; Wildermuth, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i148t-7db7159fded180eb77f2c6a4433eba9420f14e4d737f76492bfbc5f58928b4dc3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Amorphous silicon</topic><topic>Diodes</topic><topic>Event detection</topic><topic>Gamma ray detection</topic><topic>Gamma ray detectors</topic><topic>Gamma rays</topic><topic>Neutrons</topic><topic>Position sensitive particle detectors</topic><topic>Radiation detectors</topic><topic>Semiconductor films</topic><toplevel>online_resources</toplevel><creatorcontrib>Mireshghi, A.</creatorcontrib><creatorcontrib>Cho, G.</creatorcontrib><creatorcontrib>Drewery, J.</creatorcontrib><creatorcontrib>Jing, T.</creatorcontrib><creatorcontrib>Kaplan, S.N.</creatorcontrib><creatorcontrib>Perez-Mendez, V.</creatorcontrib><creatorcontrib>Wildermuth, D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mireshghi, A.</au><au>Cho, G.</au><au>Drewery, J.</au><au>Jing, T.</au><au>Kaplan, S.N.</au><au>Perez-Mendez, V.</au><au>Wildermuth, D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Amorphous silicon position sensitive neutron detector</atitle><btitle>Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference</btitle><stitle>NSSMIC</stitle><date>1991</date><risdate>1991</risdate><spage>51</spage><epage>54 vol.1</epage><pages>51-54 vol.1</pages><isbn>0780305132</isbn><isbn>9780780305137</isbn><abstract>An investigation of the possibility of using a-Si:H diode coated with an appropriate converter as a position-sensitive neutron detector is presented. Monte Carlo simulation predicts that, using a Gd film approximately 2- mu m thick, coated on a sufficiently thick amorphous silicon n-i-p diode, one can achieve a neutron detection efficiency of 25%. The experimental results presented give an average signal size of about 12000 e/sup -/ per neutron interaction, which is well above the noise and is in good agreement with the expected values. One can also fabricate pixel detectors with an element size as small as 300 mu m and still register a count rate of 2200 events/sec in a typical neutron flux of about 10/sup 7/ n/cm/sup 2/ per second. The fact that these detectors are not sensitive to gamma rays and show excellent radiation hardness makes them good candidates for use in applications such as neutron imaging, neutron crystallography, and neutron scattering.&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/NSSMIC.1991.258922</doi><oa>free_for_read</oa></addata></record>
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subjects Amorphous silicon
Diodes
Event detection
Gamma ray detection
Gamma ray detectors
Gamma rays
Neutrons
Position sensitive particle detectors
Radiation detectors
Semiconductor films
title Amorphous silicon position sensitive neutron detector
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