Threshold voltage model for deep-submicrometer MOSFETs
The threshold voltage, V/sub th/, of lightly doped drain (LDD) and non-LDD MOSFETs with effective channel lengths down to the deep-submicrometer range has been investigated. Experimental data show that in the very-short-channel-length range, the previously reported exponential dependence on channel...
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| Veröffentlicht in: | IEEE transactions on electron devices 1993-01, Vol.40 (1), p.86-95 |
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| container_end_page | 95 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 40 |
| creator | Liu, Z.-H. Hu, C. Huang, J.-H. Chan, T.-Y. Jeng, M.-C. Ko, P.K. Cheng, Y.C. |
| description | The threshold voltage, V/sub th/, of lightly doped drain (LDD) and non-LDD MOSFETs with effective channel lengths down to the deep-submicrometer range has been investigated. Experimental data show that in the very-short-channel-length range, the previously reported exponential dependence on channel length and the linear dependence on drain voltage no longer hold true. A simple quasi-two-dimensional model is used, taking into account the effects of gate oxide thickness, source/drain junction depth, and channel doping, to describe the accelerated V/sub th/ on channel length due to their lower drain-substrate junction built-in potentials. LDD devices also show less V/sub th/ dependence on drain voltage because the LDD region reduces the effective drain voltage. Based on consideration of the short-channel effects, the minimum acceptable length is determined.< > |
| doi_str_mv | 10.1109/16.249429 |
| format | Article |
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Experimental data show that in the very-short-channel-length range, the previously reported exponential dependence on channel length and the linear dependence on drain voltage no longer hold true. A simple quasi-two-dimensional model is used, taking into account the effects of gate oxide thickness, source/drain junction depth, and channel doping, to describe the accelerated V/sub th/ on channel length due to their lower drain-substrate junction built-in potentials. LDD devices also show less V/sub th/ dependence on drain voltage because the LDD region reduces the effective drain voltage. Based on consideration of the short-channel effects, the minimum acceptable length is determined.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.249429</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acceleration ; Applied sciences ; Doping ; Electronics ; Exact sciences and technology ; MOSFETs ; Poisson equations ; Predictive models ; Quasi-doping ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor process modeling ; Substrates ; Threshold voltage ; Transistors</subject><ispartof>IEEE transactions on electron devices, 1993-01, Vol.40 (1), p.86-95</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c306t-4cf44a19111fb119b6e7a7fba7c1ac80a4cad4915e8a5704da8e371ba026a3f63</citedby><cites>FETCH-LOGICAL-c306t-4cf44a19111fb119b6e7a7fba7c1ac80a4cad4915e8a5704da8e371ba026a3f63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/249429$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,4014,27914,27915,27916,54749</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/249429$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4562699$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, Z.-H.</creatorcontrib><creatorcontrib>Hu, C.</creatorcontrib><creatorcontrib>Huang, J.-H.</creatorcontrib><creatorcontrib>Chan, T.-Y.</creatorcontrib><creatorcontrib>Jeng, M.-C.</creatorcontrib><creatorcontrib>Ko, P.K.</creatorcontrib><creatorcontrib>Cheng, Y.C.</creatorcontrib><title>Threshold voltage model for deep-submicrometer MOSFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The threshold voltage, V/sub th/, of lightly doped drain (LDD) and non-LDD MOSFETs with effective channel lengths down to the deep-submicrometer range has been investigated. Experimental data show that in the very-short-channel-length range, the previously reported exponential dependence on channel length and the linear dependence on drain voltage no longer hold true. A simple quasi-two-dimensional model is used, taking into account the effects of gate oxide thickness, source/drain junction depth, and channel doping, to describe the accelerated V/sub th/ on channel length due to their lower drain-substrate junction built-in potentials. LDD devices also show less V/sub th/ dependence on drain voltage because the LDD region reduces the effective drain voltage. Based on consideration of the short-channel effects, the minimum acceptable length is determined.< ></description><subject>Acceleration</subject><subject>Applied sciences</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>MOSFETs</subject><subject>Poisson equations</subject><subject>Predictive models</subject><subject>Quasi-doping</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor process modeling</subject><subject>Substrates</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kE1PwzAMhiMEEmNw4MqpB4TEoSNO07Q5ookvaWgHxrlyU4cVpctIOiT-PZ067WTZfvzIehm7Bj4D4PoB1ExILYU-YRPI8yLVSqpTNuEcylRnZXbOLmL8HlolpZgwtVoHimvvmuTXux6_KOl8Qy6xPiQN0TaNu7prTfAd9RSS9-XH89MqXrIziy7S1aFO2ecwnr-mi-XL2_xxkZqMqz6VxkqJoAHA1gC6VlRgYWssDKApOUqDjdSQU4l5wWWDJWUF1MiFwsyqbMruRu82-J8dxb7q2mjIOdyQ38VKlCrXArIBvB_B4dMYA9lqG9oOw18FvNonU4GqxmQG9vYgxWjQ2YAb08bjgcyVUHqP3YxYS0TH7cHxD9g2ae8</recordid><startdate>199301</startdate><enddate>199301</enddate><creator>Liu, Z.-H.</creator><creator>Hu, C.</creator><creator>Huang, J.-H.</creator><creator>Chan, T.-Y.</creator><creator>Jeng, M.-C.</creator><creator>Ko, P.K.</creator><creator>Cheng, Y.C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>199301</creationdate><title>Threshold voltage model for deep-submicrometer MOSFETs</title><author>Liu, Z.-H. ; Hu, C. ; Huang, J.-H. ; Chan, T.-Y. ; Jeng, M.-C. ; Ko, P.K. ; Cheng, Y.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-4cf44a19111fb119b6e7a7fba7c1ac80a4cad4915e8a5704da8e371ba026a3f63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Acceleration</topic><topic>Applied sciences</topic><topic>Doping</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>MOSFETs</topic><topic>Poisson equations</topic><topic>Predictive models</topic><topic>Quasi-doping</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor process modeling</topic><topic>Substrates</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Z.-H.</creatorcontrib><creatorcontrib>Hu, C.</creatorcontrib><creatorcontrib>Huang, J.-H.</creatorcontrib><creatorcontrib>Chan, T.-Y.</creatorcontrib><creatorcontrib>Jeng, M.-C.</creatorcontrib><creatorcontrib>Ko, P.K.</creatorcontrib><creatorcontrib>Cheng, Y.C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Liu, Z.-H.</au><au>Hu, C.</au><au>Huang, J.-H.</au><au>Chan, T.-Y.</au><au>Jeng, M.-C.</au><au>Ko, P.K.</au><au>Cheng, Y.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Threshold voltage model for deep-submicrometer MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1993-01</date><risdate>1993</risdate><volume>40</volume><issue>1</issue><spage>86</spage><epage>95</epage><pages>86-95</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The threshold voltage, V/sub th/, of lightly doped drain (LDD) and non-LDD MOSFETs with effective channel lengths down to the deep-submicrometer range has been investigated. Experimental data show that in the very-short-channel-length range, the previously reported exponential dependence on channel length and the linear dependence on drain voltage no longer hold true. A simple quasi-two-dimensional model is used, taking into account the effects of gate oxide thickness, source/drain junction depth, and channel doping, to describe the accelerated V/sub th/ on channel length due to their lower drain-substrate junction built-in potentials. LDD devices also show less V/sub th/ dependence on drain voltage because the LDD region reduces the effective drain voltage. Based on consideration of the short-channel effects, the minimum acceptable length is determined.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.249429</doi><tpages>10</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1993-01, Vol.40 (1), p.86-95 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Acceleration Applied sciences Doping Electronics Exact sciences and technology MOSFETs Poisson equations Predictive models Quasi-doping Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor process modeling Substrates Threshold voltage Transistors |
| title | Threshold voltage model for deep-submicrometer MOSFETs |
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