High efficiency X-band power HBTs

High-efficiency X-band power GaAs-AlGaAs HBT (heterojunction bipolar transistor) performance has been achieved. A common-base 6-emitter-finger HBT device (each finger periphery 2 mu m*20 mu m) exhibited a power-added-efficiency of 62.1%, an output power of 769 mW (power density of 6.4 W/mm), and a g...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wu, C.S., Pao, C.K., Hu, M., Igawa, A.T., Wang, D.C., Wen, C.P., Cisco, T.C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aircraft Etching Fingers Gallium arsenide Heterojunction bipolar transistors Inductance Phased arrays Power generation Substrates Topology
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