Forward blocking comparison of P and N MCTs
Measurements have been conducted evaluating the forward voltage blocking capabilities of epitaxial based MOS controlled thyristor (MCT) device types of both polarities under conditions of elevated temperature (23 to 250 degrees C) and rates of voltage application. Significant differences have been d...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1149 vol.1 |
|---|---|
| container_issue | |
| container_start_page | 1144 |
| container_title | |
| container_volume | |
| creator | Arthur, S.D. Temple, V.A.K. Watrous, D.L. |
| description | Measurements have been conducted evaluating the forward voltage blocking capabilities of epitaxial based MOS controlled thyristor (MCT) device types of both polarities under conditions of elevated temperature (23 to 250 degrees C) and rates of voltage application. Significant differences have been discovered in the blocking behavior of n vs. p MCTs related to the behavior of their lower transistor, which should be taken into account when employing these devices in a power circuit. Other wide-base p and n devices should behave in a similar fashion. Because the breakdown voltage for the F-MCT decreases both with increasing temperature and with d nu /dt, the measurable room temperature static blocking voltage capability of this device must be suitably derated for the users' application.< > |
| doi_str_mv | 10.1109/IAS.1992.244417 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_244417</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>244417</ieee_id><sourcerecordid>244417</sourcerecordid><originalsourceid>FETCH-LOGICAL-i174t-734d154c1b7b73324cc95131b0dc67922714b49a5f03b7cd28c41a9e99cad4d03</originalsourceid><addsrcrecordid>eNotj01LAzEURQMiKHXWgqvsZca85GUyb1kGq4WqhdZ1ydfIaDspiSD-ewv1cuDsDlzGbkE0AIIelvNNA0SykYgI5oJVZDpxQolW6faKVaV8itO07hDwmt0vUv6xOXC3T_5rnD64T4ejzWNJE08DX3M7Bf7KX_ptuWGXg92XWP17xt4Xj9v-uV69PS37-aoeweB3bRQG0OjBGWeUkug9aVDgRPCtISkNoEOyehDKGR9k5xEsRSJvAwahZuzu3B1jjLtjHg82_-7Oj9QfWKo-NA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Forward blocking comparison of P and N MCTs</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Arthur, S.D. ; Temple, V.A.K. ; Watrous, D.L.</creator><creatorcontrib>Arthur, S.D. ; Temple, V.A.K. ; Watrous, D.L.</creatorcontrib><description>Measurements have been conducted evaluating the forward voltage blocking capabilities of epitaxial based MOS controlled thyristor (MCT) device types of both polarities under conditions of elevated temperature (23 to 250 degrees C) and rates of voltage application. Significant differences have been discovered in the blocking behavior of n vs. p MCTs related to the behavior of their lower transistor, which should be taken into account when employing these devices in a power circuit. Other wide-base p and n devices should behave in a similar fashion. Because the breakdown voltage for the F-MCT decreases both with increasing temperature and with d nu /dt, the measurable room temperature static blocking voltage capability of this device must be suitably derated for the users' application.< ></description><identifier>ISBN: 9780780306356</identifier><identifier>ISBN: 078030635X</identifier><identifier>DOI: 10.1109/IAS.1992.244417</identifier><language>eng</language><publisher>IEEE</publisher><subject>Breakdown voltage ; Circuits ; Laboratories ; Leakage current ; MOSFETs ; Pulse measurements ; Space vector pulse width modulation ; Temperature measurement ; Testing ; Thyristors</subject><ispartof>Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting, 1992, p.1144-1149 vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/244417$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4048,4049,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/244417$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Arthur, S.D.</creatorcontrib><creatorcontrib>Temple, V.A.K.</creatorcontrib><creatorcontrib>Watrous, D.L.</creatorcontrib><title>Forward blocking comparison of P and N MCTs</title><title>Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting</title><addtitle>IAS</addtitle><description>Measurements have been conducted evaluating the forward voltage blocking capabilities of epitaxial based MOS controlled thyristor (MCT) device types of both polarities under conditions of elevated temperature (23 to 250 degrees C) and rates of voltage application. Significant differences have been discovered in the blocking behavior of n vs. p MCTs related to the behavior of their lower transistor, which should be taken into account when employing these devices in a power circuit. Other wide-base p and n devices should behave in a similar fashion. Because the breakdown voltage for the F-MCT decreases both with increasing temperature and with d nu /dt, the measurable room temperature static blocking voltage capability of this device must be suitably derated for the users' application.< ></description><subject>Breakdown voltage</subject><subject>Circuits</subject><subject>Laboratories</subject><subject>Leakage current</subject><subject>MOSFETs</subject><subject>Pulse measurements</subject><subject>Space vector pulse width modulation</subject><subject>Temperature measurement</subject><subject>Testing</subject><subject>Thyristors</subject><isbn>9780780306356</isbn><isbn>078030635X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1992</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj01LAzEURQMiKHXWgqvsZca85GUyb1kGq4WqhdZ1ydfIaDspiSD-ewv1cuDsDlzGbkE0AIIelvNNA0SykYgI5oJVZDpxQolW6faKVaV8itO07hDwmt0vUv6xOXC3T_5rnD64T4ejzWNJE08DX3M7Bf7KX_ptuWGXg92XWP17xt4Xj9v-uV69PS37-aoeweB3bRQG0OjBGWeUkug9aVDgRPCtISkNoEOyehDKGR9k5xEsRSJvAwahZuzu3B1jjLtjHg82_-7Oj9QfWKo-NA</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>Arthur, S.D.</creator><creator>Temple, V.A.K.</creator><creator>Watrous, D.L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1992</creationdate><title>Forward blocking comparison of P and N MCTs</title><author>Arthur, S.D. ; Temple, V.A.K. ; Watrous, D.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-734d154c1b7b73324cc95131b0dc67922714b49a5f03b7cd28c41a9e99cad4d03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Breakdown voltage</topic><topic>Circuits</topic><topic>Laboratories</topic><topic>Leakage current</topic><topic>MOSFETs</topic><topic>Pulse measurements</topic><topic>Space vector pulse width modulation</topic><topic>Temperature measurement</topic><topic>Testing</topic><topic>Thyristors</topic><toplevel>online_resources</toplevel><creatorcontrib>Arthur, S.D.</creatorcontrib><creatorcontrib>Temple, V.A.K.</creatorcontrib><creatorcontrib>Watrous, D.L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Arthur, S.D.</au><au>Temple, V.A.K.</au><au>Watrous, D.L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Forward blocking comparison of P and N MCTs</atitle><btitle>Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting</btitle><stitle>IAS</stitle><date>1992</date><risdate>1992</risdate><spage>1144</spage><epage>1149 vol.1</epage><pages>1144-1149 vol.1</pages><isbn>9780780306356</isbn><isbn>078030635X</isbn><abstract>Measurements have been conducted evaluating the forward voltage blocking capabilities of epitaxial based MOS controlled thyristor (MCT) device types of both polarities under conditions of elevated temperature (23 to 250 degrees C) and rates of voltage application. Significant differences have been discovered in the blocking behavior of n vs. p MCTs related to the behavior of their lower transistor, which should be taken into account when employing these devices in a power circuit. Other wide-base p and n devices should behave in a similar fashion. Because the breakdown voltage for the F-MCT decreases both with increasing temperature and with d nu /dt, the measurable room temperature static blocking voltage capability of this device must be suitably derated for the users' application.< ></abstract><pub>IEEE</pub><doi>10.1109/IAS.1992.244417</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9780780306356 |
| ispartof | Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting, 1992, p.1144-1149 vol.1 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_244417 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Breakdown voltage Circuits Laboratories Leakage current MOSFETs Pulse measurements Space vector pulse width modulation Temperature measurement Testing Thyristors |
| title | Forward blocking comparison of P and N MCTs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T02%3A53%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Forward%20blocking%20comparison%20of%20P%20and%20N%20MCTs&rft.btitle=Conference%20Record%20of%20the%201992%20IEEE%20Industry%20Applications%20Society%20Annual%20Meeting&rft.au=Arthur,%20S.D.&rft.date=1992&rft.spage=1144&rft.epage=1149%20vol.1&rft.pages=1144-1149%20vol.1&rft.isbn=9780780306356&rft.isbn_list=078030635X&rft_id=info:doi/10.1109/IAS.1992.244417&rft_dat=%3Cieee_6IE%3E244417%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=244417&rfr_iscdi=true |