Paradoxical boron profile broadening caused by implantation through a screen oxide layer
The effects of an overlaying silicon dioxide layer on boron ion channeling and implant profile depths have been examined through analysis of experimentally measured profiles and the results of Monte Carlo simulations using the UT-MARLOWE code. Details of the randomizing effects of the oxide layer ar...
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| creator | Park, C. Klein, K.M. Tasch, A.F. Simonton, R.B. Lux, G.E. |
| description | The effects of an overlaying silicon dioxide layer on boron ion channeling and implant profile depths have been examined through analysis of experimentally measured profiles and the results of Monte Carlo simulations using the UT-MARLOWE code. Details of the randomizing effects of the oxide layer are presented, and a surprising anomaly is revealed: implantations through screen oxide layers can actually result in broader (deeper) profiles than similar implantations into bare silicon. The effectiveness of the screen oxide in randomizing the directions of implanted ions was found to be strongly dependent on the correlation between the ion energy and the oxide thickness. It has also been shown that even the total randomization of the directions of the ions does not completely eliminate ion channeling.< > |
| doi_str_mv | 10.1109/IEDM.1991.235422 |
| format | Conference Proceeding |
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Details of the randomizing effects of the oxide layer are presented, and a surprising anomaly is revealed: implantations through screen oxide layers can actually result in broader (deeper) profiles than similar implantations into bare silicon. The effectiveness of the screen oxide in randomizing the directions of implanted ions was found to be strongly dependent on the correlation between the ion energy and the oxide thickness. It has also been shown that even the total randomization of the directions of the ions does not completely eliminate ion channeling.< ></description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780302435</identifier><identifier>ISBN: 9780780302433</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1991.235422</identifier><language>eng</language><publisher>IEEE</publisher><subject>Boron ; Cities and towns ; Electrostatics ; Ion beams ; Ion implantation ; Microelectronic implants ; Scattering ; Semiconductor devices ; Silicon compounds ; Testing</subject><ispartof>International Electron Devices Meeting 1991 [Technical Digest], 1991, p.67-70</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/235422$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,778,782,787,788,2054,4038,4039,27908,54903</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/235422$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Park, C.</creatorcontrib><creatorcontrib>Klein, K.M.</creatorcontrib><creatorcontrib>Tasch, A.F.</creatorcontrib><creatorcontrib>Simonton, R.B.</creatorcontrib><creatorcontrib>Lux, G.E.</creatorcontrib><title>Paradoxical boron profile broadening caused by implantation through a screen oxide layer</title><title>International Electron Devices Meeting 1991 [Technical Digest]</title><addtitle>IEDM</addtitle><description>The effects of an overlaying silicon dioxide layer on boron ion channeling and implant profile depths have been examined through analysis of experimentally measured profiles and the results of Monte Carlo simulations using the UT-MARLOWE code. Details of the randomizing effects of the oxide layer are presented, and a surprising anomaly is revealed: implantations through screen oxide layers can actually result in broader (deeper) profiles than similar implantations into bare silicon. The effectiveness of the screen oxide in randomizing the directions of implanted ions was found to be strongly dependent on the correlation between the ion energy and the oxide thickness. It has also been shown that even the total randomization of the directions of the ions does not completely eliminate ion channeling.< ></description><subject>Boron</subject><subject>Cities and towns</subject><subject>Electrostatics</subject><subject>Ion beams</subject><subject>Ion implantation</subject><subject>Microelectronic implants</subject><subject>Scattering</subject><subject>Semiconductor devices</subject><subject>Silicon compounds</subject><subject>Testing</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780302435</isbn><isbn>9780780302433</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkM1OAjEURht_EgHdG1d9gcHeXkrbpUFUEowuWLAjt507UDPMkM6QyNtLgqvvLE7O4hPiEdQYQPnnxfz1cwzew1ijmWh9JQYazLRQYNfXYqisU6j0BM2NGCiYYgEe3J0Ydt2PUtoabwZi_U2ZyvY3RaplaHPbyENuq1SzDLmlkpvUbGWkY8elDCeZ9oeamp76dDb7XW6P250k2cXM3Mhzp2RZ04nzvbitqO744X9HYvU2X80-iuXX-2L2siyS832BBmNwiFx5Yxw6JrJnjmTRqgrKUgMEF8gp8BgZAlO05DRBdNOJUjgST5dsYubNIac95dPm8gf-AaC9U-4</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Park, C.</creator><creator>Klein, K.M.</creator><creator>Tasch, A.F.</creator><creator>Simonton, R.B.</creator><creator>Lux, G.E.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>Paradoxical boron profile broadening caused by implantation through a screen oxide layer</title><author>Park, C. ; Klein, K.M. ; Tasch, A.F. ; Simonton, R.B. ; Lux, G.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i89t-353cb833ef955838eaa7ef9ca7370f1dd211b8ba80193ce1beac7a82a1c864003</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Boron</topic><topic>Cities and towns</topic><topic>Electrostatics</topic><topic>Ion beams</topic><topic>Ion implantation</topic><topic>Microelectronic implants</topic><topic>Scattering</topic><topic>Semiconductor devices</topic><topic>Silicon compounds</topic><topic>Testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Park, C.</creatorcontrib><creatorcontrib>Klein, K.M.</creatorcontrib><creatorcontrib>Tasch, A.F.</creatorcontrib><creatorcontrib>Simonton, R.B.</creatorcontrib><creatorcontrib>Lux, G.E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Park, C.</au><au>Klein, K.M.</au><au>Tasch, A.F.</au><au>Simonton, R.B.</au><au>Lux, G.E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Paradoxical boron profile broadening caused by implantation through a screen oxide layer</atitle><btitle>International Electron Devices Meeting 1991 [Technical Digest]</btitle><stitle>IEDM</stitle><date>1991</date><risdate>1991</risdate><spage>67</spage><epage>70</epage><pages>67-70</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780302435</isbn><isbn>9780780302433</isbn><abstract>The effects of an overlaying silicon dioxide layer on boron ion channeling and implant profile depths have been examined through analysis of experimentally measured profiles and the results of Monte Carlo simulations using the UT-MARLOWE code. Details of the randomizing effects of the oxide layer are presented, and a surprising anomaly is revealed: implantations through screen oxide layers can actually result in broader (deeper) profiles than similar implantations into bare silicon. The effectiveness of the screen oxide in randomizing the directions of implanted ions was found to be strongly dependent on the correlation between the ion energy and the oxide thickness. It has also been shown that even the total randomization of the directions of the ions does not completely eliminate ion channeling.< ></abstract><pub>IEEE</pub><doi>10.1109/IEDM.1991.235422</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0163-1918 |
| ispartof | International Electron Devices Meeting 1991 [Technical Digest], 1991, p.67-70 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_235422 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Boron Cities and towns Electrostatics Ion beams Ion implantation Microelectronic implants Scattering Semiconductor devices Silicon compounds Testing |
| title | Paradoxical boron profile broadening caused by implantation through a screen oxide layer |
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