A high-efficiency vertical-cavity surface-emitting switching laser fabricated with post-growth cavity mode positioning

A high-efficiency vertical-cavity surface-emitting switching laser fabricated with post-growth cavity mode positioning

The first room-temperature continuous-wave (CW) operation of the double heterostructure optoelectronic switching laser implemented as a vertical-cavity laser is described. A deposited dielectric top reflector of SiO/sub 2//TiO/sub 2/ allowed the use of a cavity etch back technique after the sample w...

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Veröffentlicht in:IEEE photonics technology letters 1993-06, Vol.5 (6), p.634-636, Article 634
Hauptverfasser: Evaldsson, P.A., Taylor, G.W., Cooke, P.W., Sargood, S.K., Kiely, P.A., Docter, D.P.
Format: Artikel
Sprache:eng
Schlagworte:
Dielectrics
Etching
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser modes
Laser optical systems: design and operation
Mirrors
Optical computing
Optical surface waves
Optics
Physics
Reflectivity
Resonators, cavities, amplifiers, arrays, and rings
Stimulated emission
Surface emitting lasers
Vertical cavity surface emitting lasers
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Zusammenfassung:The first room-temperature continuous-wave (CW) operation of the double heterostructure optoelectronic switching laser implemented as a vertical-cavity laser is described. A deposited dielectric top reflector of SiO/sub 2//TiO/sub 2/ allowed the use of a cavity etch back technique after the sample was grown, to position the cavity mode at the desired wavelength. Room temperature CW threshold currents as low as 4.8 mA for a 14- mu m-diameter device were obtained with slope efficiencies of 0.45 mW/mA. The maximum CW output power was 2.5 mW and the resistivity was 4*10/sup -4/ Omega cm/sup 2/.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.219693