Resolving the mechanisms of current gain increase under forward current stress in poly emitter n-p-n transistors

The mechanisms behind moderate bias current gain ( beta ) increase of n-p-n transistors under forward current stress are investigated in polysilicon emitter transistors processed with different dopant impurities and concentrations, and with different amounts of hydrogen plasma treatment. The results...

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Veröffentlicht in:	IEEE electron device letters 1993-05, Vol.14 (5), p.252-255
Hauptverfasser:	Zhao, J., Li, G.P., Liao, K.Y., Chin, M.-R., Sun, J.Y.-C., La Duca, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aircraft Applied sciences Contact resistance Current density Degradation Electronics Exact sciences and technology Grain boundaries Hydrogen Impurities Leakage current Passivation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stress Transistors
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