Resolving the mechanisms of current gain increase under forward current stress in poly emitter n-p-n transistors
The mechanisms behind moderate bias current gain ( beta ) increase of n-p-n transistors under forward current stress are investigated in polysilicon emitter transistors processed with different dopant impurities and concentrations, and with different amounts of hydrogen plasma treatment. The results...
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| Veröffentlicht in: | IEEE electron device letters 1993-05, Vol.14 (5), p.252-255 |
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| container_end_page | 255 |
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| container_issue | 5 |
| container_start_page | 252 |
| container_title | IEEE electron device letters |
| container_volume | 14 |
| creator | Zhao, J. Li, G.P. Liao, K.Y. Chin, M.-R. Sun, J.Y.-C. La Duca, A. |
| description | The mechanisms behind moderate bias current gain ( beta ) increase of n-p-n transistors under forward current stress are investigated in polysilicon emitter transistors processed with different dopant impurities and concentrations, and with different amounts of hydrogen plasma treatment. The results suggest that transport of atomic hydrogen toward the poly/monosilicon interface region and its subsequent passivation of dangling bonds at both poly grain boundaries and the poly/monosilicon interface are responsible for the moderate bias beta increase. To alleviate the beta instability, elimination of hydrogen involvement and/or a higher doping concentration inside the poly emitter in the back-end-of-line (BEOL) processes are/is recommended.< > |
| doi_str_mv | 10.1109/55.215184 |
| format | Article |
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The results suggest that transport of atomic hydrogen toward the poly/monosilicon interface region and its subsequent passivation of dangling bonds at both poly grain boundaries and the poly/monosilicon interface are responsible for the moderate bias beta increase. To alleviate the beta instability, elimination of hydrogen involvement and/or a higher doping concentration inside the poly emitter in the back-end-of-line (BEOL) processes are/is recommended.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.215184</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aircraft ; Applied sciences ; Contact resistance ; Current density ; Degradation ; Electronics ; Exact sciences and technology ; Grain boundaries ; Hydrogen ; Impurities ; Leakage current ; Passivation ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The results suggest that transport of atomic hydrogen toward the poly/monosilicon interface region and its subsequent passivation of dangling bonds at both poly grain boundaries and the poly/monosilicon interface are responsible for the moderate bias beta increase. To alleviate the beta instability, elimination of hydrogen involvement and/or a higher doping concentration inside the poly emitter in the back-end-of-line (BEOL) processes are/is recommended.< ></description><subject>Aircraft</subject><subject>Applied sciences</subject><subject>Contact resistance</subject><subject>Current density</subject><subject>Degradation</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Grain boundaries</subject><subject>Hydrogen</subject><subject>Impurities</subject><subject>Leakage current</subject><subject>Passivation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stress</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNqN0M9LwzAUB_AgCs7pwaunHETw0JmkyZIeZfgLBoLouaTp6xZp05qXKfvvrWzs7Okd3ud94X0JueRsxjkr7pSaCa64kUdkwpUyGVPz_JhMmJY8yzmbn5IzxE_GuJRaTsjwBti33z6saFoD7cCtbfDYIe0b6jYxQkh0ZX2gPrgIFoFuQg2RNn38sbE-GEwREEdFh77dUuh8SiML2ZAFmqIN6DH1Ec_JSWNbhIv9nJKPx4f3xXO2fH16WdwvMyeUSBkvtBbCAK-1NLWzua1AFgYao0XBcjC1kKqyQkhezxmzhaiUAlXoCphtKpVPyc0ud4j91wYwlZ1HB21rA_QbLMcUUaj8H9AoU3DNR3i7gy72iBGacoi-s3Fbclb-lV8qVe7KH-31PtSis20z_u88Hg6knksj9ciudswDwGG7z_gFY1eNHA</recordid><startdate>19930501</startdate><enddate>19930501</enddate><creator>Zhao, J.</creator><creator>Li, G.P.</creator><creator>Liao, K.Y.</creator><creator>Chin, M.-R.</creator><creator>Sun, J.Y.-C.</creator><creator>La Duca, A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19930501</creationdate><title>Resolving the mechanisms of current gain increase under forward current stress in poly emitter n-p-n transistors</title><author>Zhao, J. ; Li, G.P. ; Liao, K.Y. ; Chin, M.-R. ; Sun, J.Y.-C. ; La Duca, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c252t-1977228e1d748dca3abe498ef872903e8d245ba2241d600a92b55e597be0afb53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Aircraft</topic><topic>Applied sciences</topic><topic>Contact resistance</topic><topic>Current density</topic><topic>Degradation</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Grain boundaries</topic><topic>Hydrogen</topic><topic>Impurities</topic><topic>Leakage current</topic><topic>Passivation</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stress</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, J.</creatorcontrib><creatorcontrib>Li, G.P.</creatorcontrib><creatorcontrib>Liao, K.Y.</creatorcontrib><creatorcontrib>Chin, M.-R.</creatorcontrib><creatorcontrib>Sun, J.Y.-C.</creatorcontrib><creatorcontrib>La Duca, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhao, J.</au><au>Li, G.P.</au><au>Liao, K.Y.</au><au>Chin, M.-R.</au><au>Sun, J.Y.-C.</au><au>La Duca, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Resolving the mechanisms of current gain increase under forward current stress in poly emitter n-p-n transistors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1993-05-01</date><risdate>1993</risdate><volume>14</volume><issue>5</issue><spage>252</spage><epage>255</epage><pages>252-255</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The mechanisms behind moderate bias current gain ( beta ) increase of n-p-n transistors under forward current stress are investigated in polysilicon emitter transistors processed with different dopant impurities and concentrations, and with different amounts of hydrogen plasma treatment. The results suggest that transport of atomic hydrogen toward the poly/monosilicon interface region and its subsequent passivation of dangling bonds at both poly grain boundaries and the poly/monosilicon interface are responsible for the moderate bias beta increase. To alleviate the beta instability, elimination of hydrogen involvement and/or a higher doping concentration inside the poly emitter in the back-end-of-line (BEOL) processes are/is recommended.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.215184</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1993-05, Vol.14 (5), p.252-255 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_ieee_primary_215184 |
| source | IEEE Electronic Library (IEL) |
| subjects | Aircraft Applied sciences Contact resistance Current density Degradation Electronics Exact sciences and technology Grain boundaries Hydrogen Impurities Leakage current Passivation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stress Transistors |
| title | Resolving the mechanisms of current gain increase under forward current stress in poly emitter n-p-n transistors |
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